High Displacement Damage Dose Effects in Radiation Hardened CMOS Image Sensors

CMOS image sensors (CISs) hardened by design against total ionizing dose (TID) are exposed to neutron fluences beyond 10(14) n(1 MeV)/cm(2). Neutron-irradiated devices show a huge increase in the dark current affecting uniformly the pixel array which leads to Gaussian shape dark current distributions. Moreover, random telegraph signal behavior is hardly detectable at these very high neutron fluences since the fluctuation amplitudes are hidden by the dark current shot noise. It is observed that neutrons induce a change in the depleted volume in impacted photodiodes because of doping profile modifications which are responsible for the decrease in the charge-to-voltage conversion factor and quantum efficiency. Even if neutron-induced degradations affect all the image sensor performances, results show that this technology is still functional after having absorbed 8.1 x 10(14) n(1 MeV)/cm(2). Image sensors are still able to capture an image without significant degradation compared to nonirradiated devices. Such TID radiation-hardened CISs are thus highly promising for applications where both high TID and high neutron fluence radiation tolerance are required.