EFFECT OF SUBSTRATE TEMPERATURE ON THE STRUCTURE AND OPTICAL PROPERTIES OF PVP:n-CdSe NANOCOMPOSITE THIN FILMS AND ITS SCHOTTKY DIODES PERFORMANCE

被引：0

作者：

Al-Zahra, A. ^{[1
]}

Abdullah, A. Q. ^{[1
]}

Al-Kabbi, A. S. ^{[1
]}

机构：

[1] Basrah Univ, Coll Sci, Dept Phys, Basrah, Iraq

来源：

CHALCOGENIDE LETTERS | 2017年 / 14卷 / 10期

关键词：

Thin films; Vapour deposition; Electrical Properties; Transport properties; NANOCRYSTALS; PARAMETERS; CONSTANTS; LAYER;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

CdSe/PVP nanocomposite material was prepared by a chemical bath deposition method at room temperature. Studies of the structure and optical properties of deposited thin film on the glass substrates at 300 and 400 K temperatures were carried out. X-ray diffraction studies showed that the crystallinity of the CdSe films was improved in the thin film prepared at higher temperature and grain sizes increased. Direct transitions have been observed in the optical measurements of the two samples and the energy gap decreases with increasing substrate temperature. The prepared material has been deposited on aluminum sheet substrates at 300 and 400 K temperatures to fabricate of Ag/n-CdSe:PVP Schottky diode. Characterization of the Ag/n-CdSe:PVP Schottky diode has been done at room temperature. The diode parameter as the ideality factor (n), the effective barrier height (Phi(b)) the Richardson constant (A*) has been calculated. Cheung's method are used to calculate the series resistance. Considerable changes has been observed in diode parameters and the series resistance for the two samples.

引用

页码：457 / 464

页数：8

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