Microstructure of eutectic 80Au/20Sn solder joint in laser diode package

被引：22

作者：

Teo, J. W. Ronnie ^{[1
]}

Ng, F. L. ^{[1
]}

Goi, L. S. Kip ^{[1
]}

Sun, Y. F. ^{[1
]}

Wang, Z. F. ^{[1
]}

Shi, X. Q. ^{[1
]}

Wei, J. ^{[1
]}

Li, G. Y. ^{[2
]}

机构：

[1] Singapore Inst Mfg Technol, Singapore 638075, Singapore

[2] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore

来源：

MICROELECTRONIC ENGINEERING | 2008年 / 85卷 / 03期

关键词：

soldering; intermetallic compounds; electron backscatter diffraction;

D O I：

10.1016/j.mee.2007.09.009

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Laser diodes (LD) are usually bonded onto heat sinks for the purposes of heat dissipation, mechanical support and electrical interconnect. In this study, energy dispersive X-ray analysis (EDX) and electron backscatter diffraction (EBSD) are employed to investigate the microstructure evolution of 80Au/20Sn solder joint in LD package. During reflow, Pt-Sn and (An, Ni)Sn IMCs were formed at the respective LD/solder and solder/heatsink interfaces, while delta, beta and zeta' phases of Au/Sn intermetallics were found in the solder joint. The Au-rich beta and zeta' phases in the solder joint limit the growth of interfacial IMCs. Chip shear testing showed that the failure occurred within the LD, with partial brittle fracture at the GaAs substrate and partial interfacial delamination at the GaAs/SiN interface. The strong solder bond can be attributed to the high mechanical strength of 80Au/20Sn solder, which provides improved stability for high temperature applications. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：512 / 517

页数：6

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