Mixing in Au/Si system by nuclear energy loss

被引：12
作者：
Kumar, S [1 ]
Sahoo, PK
Chauhan, RS
Kabiraj, D
Tiwari, U
Varma, D
Avasthi, DK
机构：
[1] RBS Coll, Dept Phys, Agra 282002, Uttar Pradesh, India
[2] Solid State Phys Lab, Delhi 110054, India
[3] Ctr Nucl Sci, New Delhi 110067, India
[4] Indian Inst Technol, Dept Phys, Kanpur 208016, Uttar Pradesh, India
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2003年 / 212卷
关键词：
ion beam mixing; phase formation; surface morphology;
D O I：
10.1016/S0168-583X(03)01738-5
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
In the present work, we report the formation of silicide phases in the Au/Si system by ion beam mixing at room temperature. The samples (58 nm Au on Si) were irradiated by 1 MeV Xe ions. The ion energy was chosen in such a way that it deposits maximum energy at the interface. The Rutherford backscattering spectrometry measurements were done on the pristine and irradiated samples to determine the composition of mixed region. Grazing incidence X-ray diffraction measurements were performed which showed the formation of silicide phase (Au2Si, Au3Si, Au5Si and Au5Si2). Scanning electron microscopy measurements indicated the micron size crystallites in the irradiated samples. (C) 2003 Elsevier B.V. All rights reserved.
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收藏
页码：238 / 241
页数：4
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