Electron-hole pair relaxation dynamics in binary copper-based semiconductor quantum dots

被引：15

作者：

Lou, YB ^{[1
]}

Yin, M

O'Brien, S

Burda, C

机构：

[1] Case Western Reserve Univ, Dept Chem, Ctr Chem Dynam & Nanomat Res, Cleveland, OH 44106 USA

[2] Columbia Univ, Dept Appl Phys & Appl Math, Mat Res Sci & Engn Ctr, New York, NY 10027 USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2005年 / 152卷 / 06期

关键词：

D O I：

10.1149/1.1896528

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The relaxation dynamics of the charge carriers in copper-based semiconductor quantum dots were investigated using femtosecond time-resolved pump-probe spectroscopy. It was found that copper oxide quantum dots show significantly longer carrier lifetimes (> 117 ps and a nanosecond component) compared to the copper sulfides (< 25 ps). This is probably due to a more perfect surface structure and less trapping in the copper oxide system. Both quantum dot materials seem to be interesting for solar cell applications based on the presented study. (c) 2005 The Electrochemical Society. All rights reserved.

引用

页码：G427 / G431

页数：5

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