GaN-based vertical-cavity surface-emitting lasers with AllnN/GaN distributed Bragg reflectors

被引：44
|
作者：
Takeuchi, Tetsuya [1 ]
Kamiyama, Satoshi [1 ]
Iwaya, Motoaki [1 ]
Akasaki, Isamu [1 ,2 ]
机构：
[1] Meijo Univ, Fac Sci & Technol, Nagoya, Aichi 4688502, Japan
[2] Nagoya Univ, Akasaki Res Ctr, Nagoya, Aichi 4648603, Japan
来源：
REPORTS ON PROGRESS IN PHYSICS | 2019年 / 82卷 / 01期
关键词：
gallium nitride; vertical-cavity surface-emitting lasers; distributed Bragg reflectors; blue light-emitting diodes; GROWTH; EFFICIENCY; SAPPHIRE; QUALITY; ALINN; GAAS;
D O I：
10.1088/1361-6633/aad3e9
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
This paper describes the status and prospects of gallium nitride-based vertical-cavity surface-emitting lasers (VCSELs) with semiconductor-based distributed Bragg reflectors. These optoelectronic devices, which emit laser light from the violet to green region, are expected to be a superior light source for the next-generation of displays and illumination, such as retinal scanning displays and adaptive headlights. The development status and prospects are discussed in comparison with already commercialized gallium arsenide-based infrared VCSELs.
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页数：17
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