On the use of cryogenic measurements to investigate the potential of Si/SiGe:C HBTs for terahertz operation

被引：14

作者：

Chevalier, P. ^{[1
]}

Zerounian, N. ^{[2
]}

Barbalat, B. ^{[1
,2
,3
]}

Aniel, F. ^{[2
]}

Chantre, A. ^{[1
]}

机构：

[1] STMicroelect, 850 Rue Jean Monnet, F-38926 Crolles, France

[2] Univ Paris 11, CNRS, UMR 8622, Inst Elect Fondamentale, F-91405 Orsay, France

[3] Schneider Elect, Victoria, BC, Canada

来源：

PROCEEDINGS OF THE 2007 IEEE BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING (BCTM) | 2007年

关键词：

cryogenic temperatures; SiGeHBT; terahertz;

D O I：

10.1109/BIPOL.2007.4351831

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The transit times analysis, at room and cryogenic temperatures, of SiGe HBTs featuring various f(T)/f(max) trade-offs is performed. It allows to identify the principal development axes to reach half-terahertz at 300K, a frequency already obtained at 40K.

引用

页码：26 / +

页数：2

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