Initial phases in sputter deposited HfO2-Al2O3 nanolaminate films

被引：13

作者：

Hoppe, E. E.

Aita, C. R.

Gajdardziska-Josifovska, M.

机构：

[1] Univ Wisconsin, Adv Coatings Exp Lab, Milwaukee, WI 53201 USA

[2] Univ Wisconsin, Lab Surfaces Stud, Dept Phys, Milwaukee, WI 53201 USA

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 20期

关键词：

D O I：

10.1063/1.2813624

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nanolaminate films of crystalline HfO2 and amorphous Al2O3 were grown by reactive sputter deposition on unheated fused SiO2 and the surface oxide of < 111 > Si. X-ray diffraction showed the amount of monoclinic (m) HfO2 decreased with decreasing HfO2 layer thickness, consistent with a finite crystal size effect. High resolution transmission electron microscopy of individual crystallites detected tetragonal (t) and orthorhombic (o) HfO2 as the initial phases formed. Whereas the t -> m transition is accomplished by a shear mechanism, we demonstrate the important role of polysynthetic twinning for the o -> m transition. (c) 2007 American Institute of Physics.

引用

收藏

页数：3

相关论文

共 13 条

[1] Hafnium tetraiodide and oxygen as precursors for atomic layer deposition of hafnium oxide thin films [J].

Aarik, J ;

Sundqvist, J ;

Aidla, A ;

Lu, J ;

Sajavaara, T ;

Kukli, K ;

Hårsta, A .

THIN SOLID FILMS, 2002, 418 (02) :69-72

[2] Fundamental optical absorption edge of undoped tetragonal zirconium dioxide [J].

Aita, CR ;

Hoppe, EE ;

Sorbello, RS .

APPLIED PHYSICS LETTERS, 2003, 82 (05) :677-679

[3] Textured crystallization of ultrathin hafnium oxide films on silicon substrate [J].

Bohra, Fakhruddin ;

Jiang, Bin ;

Zuo, Jian-Min .

APPLIED PHYSICS LETTERS, 2007, 90 (16)

[4] Grain boundary misorientation distributions in monoclinic zirconia [J].

Gertsman, VY ;

Zhilyaev, AP ;

Szpunar, JA .

MODELLING AND SIMULATION IN MATERIALS SCIENCE AND ENGINEERING, 1997, 5 (01) :35-52

[5] Near-edge optical absorption behavior of sputter deposited hafnium dioxide [J].

Hoppe, E. E. ;

Sorbello, R. S. ;

Aita, C. R. .

JOURNAL OF APPLIED PHYSICS, 2007, 101 (12)

[6] PROPERTIES OF HAFNIUM DIOXIDE THIN-FILM CAPACITORS [J].

HUBER, F .

IEEE TRANSACTIONS ON PARTS HYBRIDS AND PACKAGING, 1971, PHP7 (04) :141-&

[7] Low-temperature polymorphs of ZrO2 and HfO2:: A density-functional theory study -: art. no. 144107 [J].

Jaffe, JE ;

Bachorz, RA ;

Gutowski, M .

PHYSICAL REVIEW B, 2005, 72 (14)

[8] First-principles study of the structural phase transformation of hafnia under pressure [J].

Kang, J ;

Lee, EC ;

Chang, KJ .

PHYSICAL REVIEW B, 2003, 68 (05)

[9] Continuum model for the growth of interfaces [J].

Keblinski, P ;

Maritan, A ;

Toigo, F ;

Messier, R ;

Banavar, JR .

PHYSICAL REVIEW E, 1996, 53 (01) :759-778

[10] Relative stability of ZrO2 and HfO2 structural phases [J].

Lowther, JE ;

Dewhurst, JK ;

Leger, JM ;

Haines, J .

PHYSICAL REVIEW B, 1999, 60 (21) :14485-14488