Preparation and characterization of ternary Cu-Sn-E (E = S, Se) semiconductor nanocrystallites via a solvothermal element reaction route

被引：72

作者：

Chen, XY

Wang, X

An, CH

Liu, JW

Qian, YT ^{[1
]}

机构：

[1] Univ Sci & Technol China, Dept Chem, Anhua 230026, Peoples R China

[2] Univ Sci & Technol China, Struct Res Lab, Anhua 230026, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2003年 / 256卷 / 3-4期

关键词：

crystal morphology; inorganic compounds; semiconducting materials;

D O I：

10.1016/S0022-0248(03)01338-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Cu-containing ternary chalcogenides (Cu4SnS4, Cu2SnS3, Cu3SnS4, and Cu2SnSe4) were successfully synthesized by adjusting the stoichiometric proportion of the starting materials via a simple and convenient solvothermal reaction of copper powder, tin powder with sulfur or selenium powder in the temperature range of 250-300degreesC for 10-12 h. X-ray diffraction pattern, transmission electron microscope images, electronic diffraction pattern and X-ray photoelectron spectroscopy were used to characterize the products. Results showed that the coordinating ability of ethylenediamine and the reaction temperature played significant roles in the growth of Cu-Sn-E (E = S, Se) semiconductor nanocrystallites and the electron-transfer reaction. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：368 / 376

页数：9

共 39 条

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