High temperature coefficients of resistance of VO2 films grown by excimer-laser-assisted metal organic deposition process for bolometer application

被引：13

作者：

Nishikawa, Masami ^{[2
]}

Nakajima, Tomohiko ^{[1
]}

Manabe, Takaaki ^{[1
]}

Okutani, Takeshi ^{[2
]}

Tsuchiya, Tetsuo ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058565, Japan

[2] Yokohama Natl Univ, Sch Environm & Informat Sci, Hodogaya Ku, Kanagawa 2408501, Japan

来源：

MATERIALS LETTERS | 2010年 / 64卷 / 17期

关键词：

Epitaxial growth; Electrical properties; Sensors; Thin films; Laser processing; VO2; OXIDE THIN-FILMS; INSULATOR-TRANSITION; PHASE-TRANSITION; SEMICONDUCTOR; NANOPARTICLES; DETECTORS;

D O I：

10.1016/j.matlet.2010.05.050

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

With bolometer application in mind, we prepared VO2 films on TiO2 (001) substrates by an excimerlaser-assisted metal organic deposition process at 300 degrees C or less. A metal-to-insulator transition of VO2 is expected to induce high temperature coefficient of electrical resistance (TCR) useful for high-performance infrared sensors, but the practical use of crystalline VO2 films has been prevented due to the accompanied wide hysteresis. In this study, by forming the epitaxial phase only near the substrate interface, the transition of the film was successfully broadened and the hysteresis disappeared. The maximum TCR of the film was more than -10%/degrees C near room temperature, and the temperature range in which TCR was higher than -4%/degrees C was very wide (280-320 K). (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：1921 / 1924

页数：4

共 15 条

[1] Self-supporting uncooled infrared microbolometers with low-thermal mass [J].

Almasri, M ;

Butler, DP ;

Çelik-Butler, Z .

JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, 2001, 10 (03) :469-476

[2] Microstructure and metal-insulating transition of VO2 thin films [J].

Béteille, F ;

Mazerolles, L ;

Livage, J .

MATERIALS RESEARCH BULLETIN, 1999, 34 (14-15) :2177-2184

[3] Grain size effect on the semiconductor-metal phase transition characteristics of magnetron-sputtered VO2 thin films -: art. no. 051910 [J].

Brassard, D ;

Fourmaux, S ;

Jean-Jacques, M ;

Kieffer, JC ;

El Khakani, MA .

APPLIED PHYSICS LETTERS, 2005, 87 (05)

[4] Low temperature fabrication of VOx thin films for uncooled IR detectors by direct current reactive magnetron sputtering method [J].

Dai, Jun ;

Wang, Xingzhi ;

He, Shaowei ;

Huang, Ying ;

Yi, Xinjian .

INFRARED PHYSICS & TECHNOLOGY, 2008, 51 (04) :287-291

[5] Room temperature deposited vanadium oxide thin films for uncooled infrared detectors [J].

Kumar, RTR ;

Karunagaran, B ;

Mangalaraj, D ;

Narayandass, SK ;

Manoravi, P ;

Joseph, M ;

Gopal, V ;

Madaria, RK ;

Singh, JP .

MATERIALS RESEARCH BULLETIN, 2003, 38 (07) :1235-1240

[6] Size effects in the structural phase transition of VO2 nanoparticles -: art. no. 224113 [J].

Lopez, R ;

Haynes, TE ;

Boatner, LA ;

Feldman, LC ;

Haglund, RF .

PHYSICAL REVIEW B, 2002, 65 (22) :2241131-2241135

[7] OXIDES WHICH SHOW A METAL-TO-INSULATOR TRANSITION AT THE NEEL TEMPERATURE [J].

MORIN, FJ .

PHYSICAL REVIEW LETTERS, 1959, 3 (01) :34-36

[8] Metal-insulator transition of VO2 thin films grown on TiO2 (001) and (110) substrates [J].

Muraoka, Y ;

Hiroi, Z .

APPLIED PHYSICS LETTERS, 2002, 80 (04) :583-585

[9] Epitaxial Growth Mechanism for Perovskite Oxide Thin Films under Pulsed Laser Irradiation in Chemical Solution Deposition Process [J].

Nakajima, Tomohiko ;

Tsuchiya, Tetsuo ;

Ichihara, Masaki ;

Nagai, Hideaki ;

Kumagai, Toshiya .

CHEMISTRY OF MATERIALS, 2008, 20 (23) :7344-7351

[10]

NISHIKAWA M, APPL PHYS A IN PRESS

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