Study of electronic structure in Ni3Fe/Al2O3/Ni3Fe magnetic tunnel junction with various ferromagnetic layer thicknesses

被引：0

作者：

Zhou, Y ^{[1
]}

Bi, XF ^{[1
]}

Shang, JX ^{[1
]}

Xu, HB ^{[1
]}

机构：

[1] Beijing Univ Aeronaut & Astronaut, Sch Mat Sci & Engn, Beijing 100083, Peoples R China

来源：

PRICM 5: THE FIFTH PACIFIC RIM INTERNATIONAL CONFERENCE ON ADVANCED MATERIALS AND PROCESSING, PTS 1-5 | 2005年 / 475-479卷

关键词：

electronic structure; spin polarization; layer thickness;

D O I：

10.4028/www.scientific.net/MSF.475-479.3909

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A series models of Ni3Fe/AI(2)O(3)/Ni3Fe magnetic tunnel junction with Al-terminated interfaces have been established for investigating the influence of ferromagnetic layer thickness on the electronic structure, employing first-principle methods based on local spin-density approximation theory. The spin polarization of the interfacial Ni3Fe monolayer shows a maximum value as the thickness of ferromagnetic layer increases. The Al monolayers at the ferromagnetic/insulating interface and the 0 monolayer in the interior of insulating layer are also studied in terms of the change of spin polarization with the ferromagnetic layer thickness. In addition, we have found that the structure of Ni3Fe monolayer has a great influence on the spin polarization.

引用

页码：3909 / 3913

页数：5

共 14 条

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