Electronic properties and applications of ultrananocrystalline diamond

被引：0

作者：

Williams, OA ^{[1
]}

Zimmermann, T ^{[1
]}

Kubovic, M ^{[1
]}

Denisenko, A ^{[1
]}

Kohn, E ^{[1
]}

Jackman, RB ^{[1
]}

Gruen, DM ^{[1
]}

机构：

[1] Argonne Natl Lab, Ctr Nanoscale Mat, Argonne, IL 60439 USA

来源：

Synthesis, Properties and Applications of Ultrananocrystalline Diamond | 2005年 / 192卷

关键词：

Hall effect; n-type conductivity; diamond; nanocrystalline;

D O I：

暂无

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Ultrananocrystalline diamond (UNCD) is a 3-5 mu m grain size material with many of the properties of diamond. Whilst intrinsic UNCD films display a mild p-type characteristic with high resistivity, the addition of nitrogen to the gas phase during deposition renders the material n-type with low resistivity and activation energy. Hall effect measurements as a function of temperature show that this conductivity mechanism is semi metallic, with the carrier concentration decreasing very gradually with decreasing temperature. Increasing the nitrogen content in the gas phase during deposition results in higher carrier concentrations in the deposited films and lower activation energies. The carrier mobilities of the films are limited by the grain size of the films. A prototype heterostructure diode is demonstrated, combining single crystal and ultrananocrystalline diamond.

引用

页码：373 / 382

页数：10

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