Room temperature cathodoluminescence quenching of Er3+ in AlNOEr

被引:2
作者
Brien, V [1 ]
Edwards, P. R. [2 ]
Boulet, P. [1 ]
O'Donnell, K. P. [2 ]
机构
[1] Univ Lorraine, CNRS, UMR 7198, Inst Jean Lamour, Campus Artem,2 Alle Andre Guinier,BP 50840, F-54011 Nancy, France
[2] Univ Strathclyde, SUPA Dept Phys, 107 Rottenrow, Glasgow G4 0NG, Lanark, Scotland
关键词
Aluminium nitride; Cathodoluminescence; Rare earth; quenching; R; F; sputtering; LUMINESCENCE; FILMS; PHOTOLUMINESCENCE; TERBIUM;
D O I
10.1016/j.jlumin.2018.09.012
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
This paper reports a cathodoluminescence (CL) spectroscopic study of nanogranular A1N0Er, samples with erbium content, x, in the range 0.5-3.6 at%. A wide range of erbium concentration was studied with the aim of understanding the concentration quenching of CL. The composition of thin films, deposited by radiofrequency reactive magnetron sputtering, was accurately determined by Energy Dispersive X-ray Spectroscopy (EDS). CL emission was investigated in the extended visible spectral range from 350 nm to 850 nm. The critical concentration of luminescent activator Er3+ above which CL quenching occurs is 1%; the corresponding critical distance between Er3+ ions in A1N0Er(x) is about 1.0 nm. The quenching mechanism is discussed. We discount an exchange-mediated interaction in favour of a multipole-multipole phonon-assisted interaction.
引用
收藏
页码:97 / 101
页数:5
相关论文
共 21 条
[1]   Concentration quenching of the luminescence from trivalent thulium, terbium, and erbium ions embedded in an AlN matrix [J].
Benz, Felix ;
Gonser, Andreas ;
Volker, Reinhart ;
Walther, Thomas ;
Mosebach, Jan-Thomas ;
Schwanda, Bianka ;
Mayer, Nicolas ;
Richter, Gunther ;
Strunk, Horst P. .
JOURNAL OF LUMINESCENCE, 2014, 145 :855-858
[2]   How to describe concentration quenching in rare earth doped semiconductors [J].
Benz, Felix ;
Andres Guerra, J. ;
Weng, Ye ;
Weingaertner, Roland ;
Strunk, Horst P. .
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 1, 2013, 10 (01) :109-112
[3]   Concentration quenching of the green photoluminescence from terbium ions embedded in AlN and SiC matrices [J].
Benz, Felix ;
Andres Guerra, J. ;
Weng, Ye ;
Ricardo Zanatta, A. ;
Weingaertner, Roland ;
Strunk, Horst P. .
JOURNAL OF LUMINESCENCE, 2013, 137 :73-76
[4]  
Blasse G., 1994, LUMIN MAT, DOI DOI 10.1016/S1386-1425(98)00088-2
[5]   Correlation between the oxygen content and the morphology of AlN films grown by r.f. magnetron sputtering [J].
Brien, V. ;
Pigeat, P. .
JOURNAL OF CRYSTAL GROWTH, 2008, 310 (16) :3890-3895
[6]   Microstructures diagram of magnetron sputtered AlN deposits: Amorphous and nanostructured films [J].
Brien, V. ;
Pigeat, P. .
JOURNAL OF CRYSTAL GROWTH, 2007, 299 (01) :189-194
[7]   Erbium location into AIN films as probed by spatial resolution experimental techniques [J].
Brien, V. ;
Boulet, P. .
ACTA MATERIALIA, 2015, 90 :37-45
[8]   A SYSTEMATIC ANALYSIS OF THE SPECTRA OF THE LANTHANIDES DOPED INTO SINGLE-CRYSTAL LAF3 [J].
CARNALL, WT ;
GOODMAN, GL ;
RAJNAK, K ;
RANA, RS .
JOURNAL OF CHEMICAL PHYSICS, 1989, 90 (07) :3443-3457
[9]   A THEORY OF SENSITIZED LUMINESCENCE IN SOLIDS [J].
DEXTER, DL .
JOURNAL OF CHEMICAL PHYSICS, 1953, 21 (05) :836-850
[10]   THEORY OF CONCENTRATION QUENCHING IN INORGANIC PHOSPHORS [J].
DEXTER, DL ;
SCHULMAN, JH .
JOURNAL OF CHEMICAL PHYSICS, 1954, 22 (06) :1063-1070