Structural and Optical Properties of Compact SnO2 Thin Films by Sol Gel Dip Coating

被引:2
|
作者
Arote, Sandeep [1 ,2 ]
Tabhane, Vilas [1 ]
Gunjal, Shashikant [1 ]
Pathan, Habib [1 ]
机构
[1] Univ Pune, Dept Phys, Adv Phys Lab, Pune 411007, Maharashtra, India
[2] DJM Commerce & BNS Sci Coll, SN Arts, Dept Phys, Sangamner 422605, Dist Ahmednagar, India
关键词
Metal Oxides; SnO2; Sol-Gel Method; Thin Films by Sol Gel Dip Coating; GAS SENSOR; PHOTOLUMINESCENCE; NANOCRYSTALS; DEPOSITION; MORPHOLOGY; SURFACE;
D O I
10.1166/asl.2014.5479
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Compact nanocrystalline tin oxide (SnO2) thin films were prepared by sol gel dip coating technique. The effect of the number of coatings and aging time on the microstructure, optical and photoluminescence properties were studied. The results showed a photoluminescence peak at 410 nm, whose intensity decreased with increasing number of coatings. The optical properties of the films were analyzed by UV-visible absorption spectroscopy and the result showed optical band gap variation in the range of 3.55 to 3.75 eV as an effect of preparation parameters. The tetragonal structural behavior of the compact thin films was observed from X-ray diffraction pattern as an effect of annealing. It was also observed that, the morphology of compact SnO2 thin films was highly dependent on the thickness, aging time, as determined by scanning electron microscopy. The prepared compact films may have potential applications for blocking layer in dye sensitized solar cell.
引用
收藏
页码:1039 / 1043
页数:5
相关论文
共 50 条
  • [1] On the optical properties of SnO2 thin films prepared by sol-gel method
    Diana, Th
    Devi, K. Nomita
    Sarma, H. Nandakumar
    INDIAN JOURNAL OF PHYSICS, 2010, 84 (06) : 687 - 691
  • [2] Photoluminescence of undoped and Ce-doped SnO2 thin films deposited by sol-gel-dip-coating method
    Chen, Shuai
    Zhao, Xiaoru
    Xie, Haiyan
    Liu, Jinming
    Duan, Libing
    Ba, Xiaojun
    Zhao, Jianlin
    APPLIED SURFACE SCIENCE, 2012, 258 (07) : 3255 - 3259
  • [3] On the optical properties of SnO2 thin films prepared by sol-gel method
    Th Diana
    K. Nomita Devi
    H. Nandakumar Sarma
    Indian Journal of Physics, 2010, 84 : 687 - 691
  • [4] Optical and structural properties of Fe-TiO2 thin films prepared by sol-gel dip coating
    Kim, Nam Jin
    La, Young Hoon
    Im, Sang Hyeok
    Ryu, Bong Ki
    THIN SOLID FILMS, 2010, 518 (24) : E156 - E160
  • [5] Evaluation of Bulk and Surfaces Absorption Edge Energy of Sol-Gel-Dip-Coating SnO2 Thin Films
    Floriano, Emerson Aparecido
    de Andrade Scalvi, Luis Vicente
    Sambrano, Julio Ricardo
    Geraldo, Viviany
    MATERIALS RESEARCH-IBERO-AMERICAN JOURNAL OF MATERIALS, 2010, 13 (04): : 437 - 443
  • [6] Influence of Annealing Temperature on Structural, Morphological, Optical and Electrical Properties of Sol-Gel SnO2 Thin Films
    Li, Jitao
    Yang, Dingyu
    Zhu, Xinghua
    Li, Xu
    Chen, Shuqi
    Zhao, Yuqi
    JOURNAL OF NANO RESEARCH, 2018, 52 : 15 - 20
  • [7] Effect of annealing temperature on the structural and optical properties of SnO2 thin films elaborated by sol-gel technique
    Khechba, M.
    Hafdallah, A.
    Soualhia, A.
    Hanini, F.
    FUNCTIONAL MATERIALS, 2024, 31 (03): : 516 - 519
  • [8] Structural and optoelectronic properties of indium doped SnO2 thin films deposited by sol gel technique
    Lekshmy, S. Sujatha
    Joy, K.
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2014, 25 (04) : 1664 - 1672
  • [9] Structural, optical and electrochromic properties of cerium dioxide thin films prepared by sol-gel dip coating method
    Gokdemir, F. Pinar
    Saatci, A. Evrim
    Ozdemir, Orhan
    Keskin, Bahadir
    Kutlu, Kubilay
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2015, 38 : 300 - 305
  • [10] Investigation of UV photosensor properties of Al-doped SnO2 thin films deposited by sol-gel dip-coating method
    Selma, Kaour
    Salima, Benkara
    Seddik, Bouabida
    Djamil, Rechem
    Lazhar, Hadjeris
    JOURNAL OF SEMICONDUCTORS, 2023, 44 (03)