Ultra low-dielectric-constant methylated mesoporous silica films with high hydrophobicity and stability

被引：10
|
作者：
Yuan, Hao [2 ,3 ]
Xu, Jiaqiang [1 ]
Xie, Lili [3 ]
机构：
[1] Shanghai Univ, Dept Chem, Shanghai 200444, Peoples R China
[2] Shanghai Univ, Dept Phys, Shanghai 200444, Peoples R China
[3] Shanghai Second Polytech Univ, Dept Environm Engn, Shanghai 201209, Peoples R China
来源：
MATERIALS CHEMISTRY AND PHYSICS | 2011年 / 129卷 / 03期
关键词：
Mesoporous silica films; Methyl-functionalization; Ultra low-k materials; Structural stability; THIN-FILMS;
D O I：
10.1016/j.matchemphys.2011.06.006
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Vapor phase treatment with tetraethyl orthosilicate (TEOS) is used to improve the performance of methylated mesoporous silica films spin-coated on silicon wafers. Subsequent calcination leads to formation of ultra low dielectric-constant (k) films with high hydrophobicity and structural stability. The k value of the films is about 1.75, and remains as low as 1.82 in an 80%-relative-humidity environment over seven days. Mechanical strength (elastic modulus and hardness) is high enough to withstand the stresses that occur during the chemical mechanical polishing and wire bonding process (E = 10.9 GPa). Effects of the methyl group and TEOS vapor treatment on the structural stability and hydrophobicity are systematically studied. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码：1195 / 1200
页数：6
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