Temperature-induced reversible phase transition of a Si(113) surface

被引：10

作者：

Hwang, CC ^{[1
]}

Kim, HS

Kim, YK

Ihm, KW

Park, CY

An, KS

Kim, KJ

Kang, TH

Kim, B

机构：

[1] Pohang Univ Sci & Technol, Pohang Accelerator Lab, Beamline Res Div, Pohang 790784, Kyungbuk, South Korea

[2] Sungkyunkwan Univ, Dept Phys, Suwon 440746, South Korea

[3] Sungkyunkwan Univ, Inst Basic Sci, Suwon 440746, South Korea

[4] Korea Res Inst Chem Technol, Thin Film Mat Lab, Taejon 305600, South Korea

[5] Pohang Univ Sci & Technol, Dept Phys, Pohang 790784, Kyungbuk, South Korea

来源：

PHYSICAL REVIEW B | 2001年 / 64卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.64.045305

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The structural phase transition (PT) of the Si(113) surface upon varying the temperature has been investigated using synchrotron radiation photoemission spectroscopy (SRPES). It was observed that the Si(113) surface reconstructs to a 3 x 2 phase at room temperature (RT). The 3 x 2 surface was found to transform to 3 x 1 at about 800 K. Our PES results show that the local structure of the 3 x 2 surface at RT is the same as that of the 3 x 1 surface at 800 K. The PT upon raising the temperature can be understood via the thermal fluctuation of two types of tetramer on the 3 x 2 surface. We thus propose that the temperature-induced PT is an order-disorder transition.

引用

页数：5

共 27 条

[1] CRITICAL-BEHAVIOR AT CHIRAL MELTING - DISORDERING OF THE SI(113)-(3X1) RECONSTRUCTION [J].