Selective area growth of GaN microstructures on patterned (111) and (001) Si substrates

Selective MOVPE growth of GaN microstructure on silicon substrates has been investigated using SiO2 mask having circular or stripe window. In case of (001)substrate, grooves with (1 1 1) facets at the sides were made by using the etching anisotropy of a KOH solution. On the (1 1 1) facets of patterned silicon substrate (or on the as opened window region of (1 1 1) substrate), growth of wurtzite GaN was performed, of which the c-axis is oriented along the (1 1 1) axis of silicon. The photoluminescence and X-ray diffraction analysis were performed to characterize the single crystal to reveal the effect of the growth conditions of the intermediated layer and the microstructure. (C) 2001 Elsevier Science B.V. All rights reserved.