Properties of nanocrystalline cubic silicon carbide thin films prepared by hot-wire chemical vapor deposition using SiH4/CH4/H2 at various substrate temperatures

被引：15

作者：

Tabata, Akirnori ^{[1
]}

Komura, Yusuke ^{[1
]}

Hoshide, Yoshiki ^{[1
]}

Narita, Tomoki ^{[2
]}

Kondo, Akihiro ^{[2
]}

机构：

[1] Nagoya Univ, Dept Elect Engn & Comp Sci, Nagoya, Aichi 4648603, Japan

[2] Gifu Univ, Dept Elect & Elect Engn, Gifu 5011193, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2008年 / 47卷 / 01期

关键词：

hot-wire CVD; silicon carbide; 3C-SiC; nanocrystalline; low-temperature deposition;

D O I：

10.1143/JJAP.47.561

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Silicon carbide (SiC) thin films were prepared by hot-wire chemical vapor deposition from SiH4/CH4/H-2 gases, and the influence of substrate temperature, T-s (104 < T-s < 434 degrees C), on the properties of the SiC thin films was investigated. X-ray diffraction patterns and Raman scattering spectra revealed that nanocrystalline cubic SiC (nc-3C-SiC) films grew at T-s above 187 degrees C, while completely amorphous films grew at T-s = 104 degrees C. Fourier transform infrared absorption spectra revealed that the crystallinity of the nc-3C-SiC was improved with increasing T, up to 282 degrees C and remained almost unchanged with a further increase in T,, from 282 to 434 degrees C. The spin density was reduced monotonically with increasing T-s.

引用

页码：561 / 565

页数：5

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