Microwave Photoresistance of a Two-Dimensional Topological Insulator in a HgTe Quantum Well

被引：5
|
作者：
Yaroshevich, A. S. [1 ]
Kvon, Z. D. [1 ,2 ]
Gusev, G. M. [3 ]
Mikhailov, N. N. [1 ,2 ]
机构：
[1] Russian Acad Sci, Rzhanov Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia
[2] Novosibirsk State Univ, Novosibirsk 630090, Russia
[3] Univ Sao Paulo, Inst Fis, BR-13596017 Sao Paulo, SP, Brazil
来源：
JETP LETTERS | 2020年 / 111卷 / 02期
基金：
俄罗斯科学基金会; 巴西圣保罗研究基金会;
关键词：
EDGE TRANSPORT;
D O I：
10.1134/S0021364020020113
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The microwave photoresistance of a two-dimensional topological insulator in a HgTe quantum well with an inverted spectrum has been experimentally studied under irradiation at frequencies of 110-169 GHz. Two mechanisms of formation of this photoresistance have been revealed. The first mechanism is due to transitions between the dispersion branches of edge current states, whereas the second mechanism is caused by the action of radiation on the bulk of the quantum well.
引用
收藏
页码：121 / 125
页数：5
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