Implication of oxygen vacancies on current conduction mechanisms in TiN/Zr1-xAlxO2/TiN metal-insulator-metal structures

被引：20

作者：

Paskaleva, A. ^{[1
]}

Lemberger, M. ^{[2
]}

Bauer, A. J. ^{[2
]}

Frey, L. ^{[2
,3
]}

机构：

[1] Bulgarian Acad Sci, Inst Solid State Phys, Sofia 1784, Bulgaria

[2] Fraunhofer Inst Integrated Syst & Device Technol, D-91058 Erlangen, Germany

[3] Univ Erlangen Nurnberg, Chair Elect Devices, D-91058 Erlangen, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 2011年 / 109卷 / 07期

关键词：

HFO2;

D O I：

10.1063/1.3565056

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The dominating conduction mechanisms through TiN/Zr1-xAlxO2/TiN capacitors have been investigated over a wide temperature range (25 K to 430 K) in order to obtain information about the traps which cause the current transport. Single positive charged oxygen vacancies are the principal transport sites which participate in all mechanisms observed. However, the conduction mostly defined by intrinsic traps could also be strongly influenced by defects originating from undesirable high-k/metal gate interface reactions which could act as real traps or as transport sites. (C) 2011 American Institute of Physics. [doi:10.1063/1.3565056]

引用

页数：3

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