Femtosecond dynamics of dielectric films in the pre-ablation regime

被引：60

作者：

Mero, M ^{[1
]}

Sabbah, AJ ^{[1
]}

Zeller, J ^{[1
]}

Rudolph, W ^{[1
]}

机构：

[1] Univ New Mexico, Dept Phys & Astron, Albuquerque, NM 87131 USA

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2005年 / 81卷 / 02期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1007/s00339-005-3216-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The ultra-fast dynamics of dielectric oxide materials excited close to the laser-damage threshold is studied by performing transient reflection and transmission pump-probe measurements on TiO2, Ta2O5, and HfO2 films. The time-dependent dielectric constant is retrieved taking into account standing-wave effects of both pump and probe. A sub-100-fs transient is followed by a 1-ps transient, during which a sign reversal from negative to positive is observed in the real part of the induced change in the dielectric function, indicating the formation of deep defect states, possibly self-trapped excitons.

引用

页码：317 / 324

页数：8

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