Enhanced magnetic and bolometric sensitivity of La0.7Ce0.3MnO3 thin films due to 200 MeV Ag ion irradiation -: art. no. 222501

被引：28

作者：

Choudhary, RJ ^{[1
]}

Kumar, R

Patil, SI

Husain, S

Srivastava, JP

Malik, SK

机构：

[1] Aruna Asaf Ali Marg, Ctr Nucl Sci, New Delhi 110067, India

[2] Univ Pune, Dept Phys, Pune 41107, Maharashtra, India

[3] Aligarh Muslim Univ, Dept Phys, Aligarh 202002, Uttar Pradesh, India

[4] Tata Inst Fundamental Res, Bombay 400005, Maharashtra, India

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 22期

关键词：

D O I：

10.1063/1.1941479

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The parameters for bolometric performance [temperature coefficient of resistance (TCR) and noise value] and magnetic sensitivity of pulsed-laser-deposited thin films of La0.7Ce0.3MnO3 and their dependence on the 200 MeV Ag ions irradiation are studied. It is observed that the TCR value and magnetic sensitivity can be tuned in different temperature regime by controlling the irradiation fluence value. It turns out that irradiation with a fluence value of 5x10(10) ions/cm(2) changes the TCR value in a positive direction and enhances magnetic sensitivity at room temperature, while irradiation with a fluence value of 1x10(12) ions/cm(2) enhances these parameters at 200 K. The observations are explained on the basis of structural and electrical transport modifications induced by the 200 MeV Ag ion irradiation. (c) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

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