Phonon anharmonic frequency shift induced by four-phonon scattering calculated from first principles

被引:34
作者
Feng, Tianli [1 ,2 ]
Yang, Xiaolong [1 ,2 ,3 ,4 ]
Ruan, Xiulin [1 ,2 ]
机构
[1] Purdue Univ, Sch Mech Engn, W Lafayette, IN 47907 USA
[2] Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA
[3] Xi An Jiao Tong Univ, Frontier Inst Sci & Technol, Xian 710049, Shaanxi, Peoples R China
[4] Xi An Jiao Tong Univ, State Key Lab Mech Behav Mat, Xian 710049, Shaanxi, Peoples R China
关键词
THERMAL-EXPANSION; TEMPERATURE-DEPENDENCE; SILICON; PERFORMANCE;
D O I
10.1063/1.5048799
中图分类号
O59 [应用物理学];
学科分类号
摘要
Phonon energies at finite temperatures shift away from their harmonic values due to anharmonicity. In this paper, we have realized the rigorous calculation of phonon energy shifts of silicon by threeand four-phonon scattering from first principles. The anharmonic fourth-order force constants are calculated by considering up to the fifth nearest neighbors. The results agree reasonably well with available data from inelastic neutron scattering throughout the Brillouin zone. Surprisingly, the frequency shifts of optical phonon modes near the G point are sensitive to the cutoff radius of the fourth-order force constants, in contrast to the four-phonon scattering rates, which nearly saturate when considering the second nearest neighbors. We have also compared the results with ab initio molecular dynamics simulations and found that the higher order of anharmonicity is important for optical phonons. Our work provides critical insight into the anharmonic phonon frequency shift and will have a significant impact on the thermal and optical applications. Published by AIP Publishing.
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页数:8
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