Chemical etching effects in porous silicon layers

被引：3

作者：

Navarro-Urrios, D ^{[1
]}

Pérez-Padrón, C ^{[1
]}

Lorenzo, E ^{[1
]}

Capuj, NE ^{[1
]}

Gaburro, Z ^{[1
]}

Oton, CJ ^{[1
]}

Pavesi, L ^{[1
]}

机构：

[1] Univ La Laguna, Dept Fis Basica, San Cristobal la Laguna 38071, Spain

来源：

NANOTECHNOLOGY | 2003年 / 5118卷

关键词：

porous silicon; etching; electrochemistry; photoluminescence;

D O I：

10.1117/12.499073

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have studied the properties of p(+)-type doped porous silicon, formed by electrochemical etching, when is left in presence of the electrolyte for different post-etching times. Using an interferometric technique, we monitored the formation of the porous silicon layer during the electrochemical treatment as well as the change of its porosity during the post-etch process due to a chemical dissolution mechanism. These data are complemented with a study of the photoluminescence modification for different post-etching times.

引用

页码：109 / 116

页数：8

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