Ge growth mode modification on carbon-induced Si(001)-c(4 x 4) surfaces

被引：26
作者：
Stoffel, M
Simon, L
Bischoff, JL
Aubel, D
Kubler, L
Castelein, G
机构：
[1] ESA, CNRS 7014, Lab Phys & Spect Elect, F-68093 Mulhouse, France
[2] Inst Chim Surfaces & Interfaces, UPR 9069, F-68057 Mulhouse, France
来源：
THIN SOLID FILMS | 2000年 / 380卷 / 1-2期
关键词：
germanium; silicium; carbon; RHEED; AFM; growth mode;
D O I：
10.1016/S0040-6090(00)01465-6
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Strong Ge morphological modifications were observed upon an ordered C-pre-covered Si(001)-c(4 x 4) reconstructed surface used as a template as compared to the growth on bare Si(001)-(2 x 1) substrates. While on bare substrates, the Ge wetting layer of the Stranski-Krastanov mode has a critical thickness of approximately 3-4 monolayers (ML), with the c-(4 x 4) template, island nucleation already occurs after 1 Ge ML and growth proceeds in a Volmer-Weber mode. This suggests that the C-rich surface derm associated with the c-(4 x 4) reconstruction is able to strongly affect the Ge wetting. (C) 2000 Elsevier Science B.V. All rights reserved.
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收藏
页码：32 / 35
页数：4
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