LINEARITY ENHANCED DOHERTY POWER AMPLIFIER USING ANALOG PREDISTORTION

被引:2
作者
Cho, Choon Sik [1 ]
Lee, Jae W. [1 ]
机构
[1] Korea Aerosp Univ, Sch Elect Telecommun & Comp Engn, Goyang, Gyeonggi Do, South Korea
关键词
Doherty amplifier; analog predistortion; power amplifiers;
D O I
10.1002/mop.25701
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We propose a linearity-enhanced Doherty power amplifier using an analog predistortion (APD) technique, which incorporates an intermodulation (IM) generator. Because the IM generator is configured with antiparalleled diode structure, the resulting Doherty power amplifier behaves differently from a conventional one. Using antiphased IM generated by the hybrid coupler before the auxiliary amplifier, linearity for the whole power amplifier is improved because the IM from the main amplifier can be cancelled out at the combining section. The output power of the proposed Doherty power amplifier is observed 28 dBm at the maximum in measurement, whereas the adjacent channel leakage ratio is 18 dB improved at 5 MHz offset compared with that of the Doherty power amplifier without APD. (C) 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:403-404, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25701
引用
收藏
页码:403 / 404
页数:2
相关论文
共 7 条
[1]  
[Anonymous], 2006, RF power amplifiers for wireless communications
[2]   Novel third-order distortion generator with residual IM2 suppression capabilities [J].
Huang, W ;
Saad, RE .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1998, 46 (12) :2372-2382
[3]  
Kenington P.B., 2000, ARTECH MICR, P21
[4]   Linearity improvement of class-E Doherty amplifier using gm3 cancellation [J].
Kim, J. H. ;
Cho, C. S. ;
Lee, J. W. ;
Kim, J. .
ELECTRONICS LETTERS, 2008, 44 (05) :359-361
[5]  
Matsubara H., 2007, AS PAC MICR C BANGK
[6]   CUBER PREDISTORTION LINEARIZER FOR RELAY EQUIPMENT IN 800 MHZ BAND LAND MOBILE TELEPHONE SYSTEM [J].
NOJIMA, T ;
KONNO, T .
IEEE TRANSACTIONS ON VEHICULAR TECHNOLOGY, 1985, 34 (04) :169-177
[7]  
Razavi B., 2011, RF Microelectronics, V2nd