Avalanche Photodiode Array Based on InGaAs/InAlAs/InP Heteroepitaxial Structures with Separated Absorption and Multiplication Regions

In this paper, we analyze the design features of avalanche photodiode architectures with separated absorption (InGaAs) and multiplication (InAlAs) regions. Two architectures are considered: p(+)-M-c-i-n(+)- and p(+)-i-c-M-n(+)-types implemented in InGaAs/InAlAs/InP heteroepitaxial structures (HES). Three main layers, absorbing (i), charge (c), and multiplying (M), were mandatory for each architecture. Matrices of photosensitive elements were formed using data from InGaAs/InAlAs/InP HES grown via MOS hydride epitaxy (MOSHE) method. Photocurrent multiplication factors, which varied from 1 to 18-25 in the range of reverse bias voltages of U = 8-14 V, were calculated based on the studied current-voltage characteristics of avalanche elements in the matrices.