Ni/Si-based ohmic contacts to p- and n-type GaN

被引：0

作者：

Kaminska, E ^{[1
]}

Piotrowska, A ^{[1
]}

Barcz, A ^{[1
]}

Guziewicz, M ^{[1
]}

Kasjaniuk, S ^{[1
]}

Bremser, MD ^{[1
]}

Davis, RF ^{[1
]}

Dynowska, E ^{[1
]}

Kwiatkowski, S ^{[1
]}

机构：

[1] Inst Electron Technol, Warsaw, Poland

来源：

NITRIDE SEMICONDUCTORS | 1998年 / 482卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ni/Si-based ohmic contact scheme for GaN, based on the solid-phase regrowth (SPR) mechanism have been developed. Using Mg and Si as dopant species, ohmic contacts with a resistivity of similar to 1*10(-3)Omega cm(2) to p-GaN (p approximate to 3*10(17)cm(-3)) and n-GaN (n approximate to 2*10(17)cm(-3), respectively, have been obtained. SIMS, XRD, and RES analysis show in as-deposited contacts, an initial reaction at GaN/Ni interface, leading to the formation of an Ni-Ga-N layer. The ohmic behavior of contacts, observed after annealing at 400 degrees C, is accompanied by structural transformations in the contact region: i) the decomposition of Ni-Ga-N layer and ii) the growth of NiSi compound.

引用

页码：1077 / 1082

页数：6

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