Microstructure and magnetic properties of (001) textured L10 FePt films on amorphous glass substrate

被引:18
作者
Speliotis, Th. [1 ]
Varvaro, G. [2 ]
Testa, A. M. [2 ]
Giannopoulos, G. [1 ]
Agostinelli, E. [2 ]
Li, W. [3 ]
Hadjipanayis, G. [3 ]
Niarchos, D. [1 ]
机构
[1] NCSR Demokritos, Inst Nanosci & Nanotechnol, Athens 15310, Greece
[2] CNR, Ist Struttura Mat, Rome, Italy
[3] Univ Delaware, Dept Phys & Astron, Newark, DE 19716 USA
关键词
L1(0) FePt; glass substrate; Magnetization reversal; Thin film growth; THIN-FILMS; TEMPERATURE; CU; ENHANCEMENT; HYSTERESIS; DEPOSITION; ANISOTROPY; MECHANISM; ALLOYS;
D O I
10.1016/j.apsusc.2015.02.073
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
L1(0) FePt thin films with an island-like morphology and magnetic perpendicular anisotropy were grown at low temperature (300 < T-dep< 375 degrees C) by magnetron sputtering on Hoya glass substrates using a 30-nm thick Cr (2 0 0) underlayer. An MgO buffer layer with a thickness of 2 nm was used to inhibit the diffusion from the Cr underlayer and promote the growth of (0 0 1) oriented L1(0) FePt films by inducing an in-plane lattice distortion. By varying the substrate temperature and the Ar sputter pressure (3.5 < P-Ar< 15 mTorr) during the deposition, the degree of chemical order, the microstructure and the magnetic properties were tuned and the best properties in term of squareness ratio (M-r/M-s similar to 0.95) and coercive field (H-c similar to 14 kOe) were observed for films deposited at T-dep = 350 degrees C and P-Ar= 5 mTorr, due to the appearance of a tensile strain, which favors the perpendicular anisotropy. The analysis of the angular dependence of remanent magnetization curves on the optimized sample suggests that the magnetization reversal is highly incoherent due to the inter-island interactions. Our results provide useful information on the low temperature growth of FePt films with perpendicular anisotropy onto glass substrates, which are relevant for a variety of technological applications, such as magnetic recording and spintronic devices. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码:118 / 124
页数:7
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