Silicon-based tunneling field-effect transistor with elevated germanium source formed on (110) silicon substrate

被引：51

作者：

Han, Genquan ^{[1
]}

Guo, Pengfei ^{[1
]}

Yang, Yue ^{[1
]}

Zhan, Chunlei ^{[1
]}

Zhou, Qian ^{[1
]}

Yeo, Yee-Chia ^{[1
]}

机构：

[1] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 119260, Singapore

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 15期

关键词：

GE; PRESSURE; ALLOYS; GROWTH; BORON; GAAS; FET; SI;

D O I：

10.1063/1.3579242

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Si-based tunneling field-effect transistors (TFETs) with elevated Ge source were fabricated on Si(110) substrate. The in situ B-doped Ge (Ge:B) source grown on Si(110) has a substitutional B concentration up to 7.8 X 10(20) cm(-3), that is more than one order of magnitude higher than that in Ge grown on Si(100) under the same growth conditions. Ge:B epitaxy on (110) and (100) Si is discussed. The TFET with elevated Ge source formed on Si(110) has a subthreshold swing of 85 mV/decade, which is a substantial improvement over that of the control TFET formed on Si(100). This is attributed to the high B doping concentration in the Ge: B(110) source as well as the band gap narrowing effect. (C) 2011 American Institute of Physics. [doi:10.1063/1.3579242]

引用

页数：3

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