Influence of low-level Pr substitution on the superconducting properties of YBa2Cu3O7-δ single crystals

被引:1
|
作者
Kortyka, A. [1 ,2 ]
Puzniak, R. [1 ]
Wisniewski, A. [1 ]
Weber, H. W. [2 ]
Doyle, T. B. [3 ]
Cai, Y. Q. [4 ]
Yao, X. [4 ]
机构
[1] Polish Acad Sci, Inst Phys, Al Lotnikow 32-46, PL-02668 Warsaw, Poland
[2] Univ Vienna, Inst Atom, A-1020 Vienna, Austria
[3] Univ KwaZulu Natal, Sch Phys, Durban 4000, South Africa
[4] Shanghai Jiao Tong Univ, Dept Phys, Shanghai 200240, Peoples R China
来源
25TH INTERNATIONAL CONFERENCE ON LOW TEMPERATURE PHYSICS (LT25), PART 5: SUPERCONDUCTIVITY | 2009年 / 150卷
关键词
STATIC MAGNETIC-BEHAVIOR; TEMPERATURE; DEPENDENCE;
D O I
10.1088/1742-6596/150/5/052123
中图分类号
O414.1 [热力学];
学科分类号
摘要
We report on measurements on Y1-xPrxBa2Cu3O7-delta single crystals, with x varying from 0 to 2.4%. The upper and the lower critical fields, H-c2 and H-c1, the Ginzburg-Landau parameter, kappa, and the critical current density, J(c)(B), were determined from magnetization measurements and the effective media approach scaling method. We present the influence of Pr substitution on the pinning force density as well as on the trapped field profiles analyzed by Hall probe scanning.
引用
收藏
页数:4
相关论文
共 50 条
  • [11] Phase transition in YBa2Cu3O7-δ and YBa2Cu3O7-δ/Y3Fe5O12 nanoparticles at low temperatures and high fields
    Khene, S.
    Gasmi, M.
    Fillion, G.
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2015, 373 : 188 - 194
  • [12] Hydrostatic-pressure effects on the pseudogap in slightly doped YBa2Cu3O7-δ single crystals
    Solovjov, A. L.
    Omelchenko, L. V.
    Vovk, R. V.
    Dobrovolskiy, O. V.
    Nazyrov, Z. F.
    Kamchatnaya, S. N.
    Sergeyev, D. M.
    PHYSICA B-CONDENSED MATTER, 2016, 493 : 58 - 67
  • [13] Relaxation of the normal electrical resistivity induced by high-pressure in strongly underdoped YBa2Cu3O7-δ single crystals
    Vovk, R. V.
    Khadzhai, G. Ya.
    Nazyrov, Z. F.
    Goulatis, I. L.
    Chroneos, A.
    PHYSICA B-CONDENSED MATTER, 2012, 407 (22) : 4470 - 4472
  • [14] Superconducting state parameters, pinning centres and their effectiveness for Y1-xPrxBa2Cu3O7-δ single crystals with low Pr contents
    Kortyka, A.
    Doyle, T. B.
    Puzniak, R.
    Wisniewski, A.
    Weber, H. W.
    Cai, Y. Q.
    Yao, X.
    SUPERCONDUCTOR SCIENCE & TECHNOLOGY, 2009, 22 (10)
  • [15] Transport properties of ultrathin YBa2Cu3O7-δ nanowires: A route to single-photon detection
    Arpaia, Riccardo
    Golubev, Dmitri
    Baghdadi, Reza
    Ciancio, Regina
    Drazic, Goran
    Orgiani, Pasquale
    Montemurro, Domenico
    Bauch, Thilo
    Lombardi, Floriana
    PHYSICAL REVIEW B, 2017, 96 (06)
  • [16] Comparative Analysis of the Irradiation with Medium Fluences of High-Energy Electrons and Pr Doping on the Fluctuation Conductivity of YBa2Cu3O7-δ Single Crystals
    Khadzhai, George
    Goulatis, Ioannis
    Chroneos, Alexander
    Feher, Alexander
    Vovk, Ruslan
    APPLIED SCIENCES-BASEL, 2024, 14 (15):
  • [17] Mixed-State Microwave Response in Thin Superconducting YBa2Cu3O7-δ Films
    Kalenyuk, O. A.
    Greben, K. A.
    Vakalyuk, O. V.
    Moskalyuk, V. O.
    Flis, V. S.
    Pan, V. M.
    METALLOFIZIKA I NOVEISHIE TEKHNOLOGII, 2010, 32 (09): : 1141 - 1153
  • [18] Effect of impurity and radiation defects on the scattering of normal and fluctuation carriers in YBa2Cu3O7-δ and Y1-zPrzBa2Cu3O7-δ single crystals
    Azarenkov, N. A.
    Khadzhai, G. Ya.
    Gevorkyan, E. S.
    Goulatis, I.
    Chroneos, A.
    Feher, A.
    Komisarov, A. O.
    Vragov, O. Yu.
    Kovrigin, V. A.
    Vovk, R. V.
    LOW TEMPERATURE PHYSICS, 2024, 50 (11) : 1013 - 1022
  • [19] Electron transport and stability of the oxygen subsystem of YBa2Cu3O7-δ single crystals upon prolonged exposure to air
    Khadzhai, G. Ya.
    Vovk, R. V.
    LOW TEMPERATURE PHYSICS, 2014, 40 (12) : 1044 - 1047
  • [20] Evolution of the metal-insulator transition in oxygen nonstoichiometric YBa2Cu3O7-δ single crystals under pressure
    Vovk, R. V.
    Vovk, N. R.
    Goulatis, I. L.
    Chroneos, A.
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2013, 24 (08) : 3132 - 3135