Achieving zero stress in iridium, chromium, and nickel thin films

被引:26
作者
Broadway, David M. [1 ]
Weimer, Jeffrey [2 ]
Gurgew, Danielle [2 ]
Lis, Tomasz [2 ]
Ramsey, Brian D. [1 ]
O'Dell, Stephen L. [1 ]
Gubarev, Mikhail [1 ]
Ames, A. [3 ]
Bruni, R. [3 ]
机构
[1] NASA, George C Marshall Space Flight Ctr, Huntsville, AL 35812 USA
[2] Univ Alabama, Huntsville, AL 35899 USA
[3] Smithsonian Astrophys Observ, Cambridge, MA 02140 USA
来源
EUV AND X-RAY OPTICS: SYNERGY BETWEEN LABORATORY AND SPACE IV | 2015年 / 9510卷
关键词
x-ray space telescopes; soft x-ray optical coatings; in-situ measurement of film stress; thin film characterization; zero stress iridium thin films; INTRINSIC STRESS; METAL-FILMS;
D O I
10.1117/12.2180641
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We examine a method for achieving zero intrinsic stress in thin films of iridium, chromium, and nickel deposited by magnetron sputter deposition. The examination of the stress in these materials is motivated by efforts to advance the optical performance of light-weight x-ray space telescopes into the regime of sub-arc second resolution. A characteristic feature of the intrinsic stress behavior in chromium and nickel is their sensitivity to the magnitude and sign of the intrinsic stress with argon gas pressure, including the existence of a critical pressure that results in zero film stress. This critical pressure scales linearly with the film's density. While the effect of stress reversal with argon pressure has been previously reported by Hoffman and others for nickel and chromium, we have discovered a similar behavior for the intrinsic stress in iridium films. Additionally, we have identified zero stress in iridium shortly after island coalescence in the high adatom mobility growth regime. This feature of film growth is used for achieving a total internal stress of -2.89 MPa for a 15.8 nm thick iridium film with a surface roughness of 5.0 +/- 0.5 angstrom based x-ray reflectivity (XRR) measurement at CuK alpha. The surface topography was also examined using atomic force microscopy (AFM). The examination of the stress in these films has been performed with a novel in-situ measurement device. The methodology and sensitivity of the in-situ instrument is also described herein.
引用
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页数:15
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