Spin-orbit interaction in InSb nanowires

被引：126

作者：

van Weperen, I. ^{[1
,2
]}

Tarasinski, B. ^{[3
]}

Eeltink, D. ^{[1
,2
]}

Pribiag, V. S. ^{[1
,2
]}

Plissard, S. R. ^{[1
,2
,4
]}

Bakkers, E. P. A. M. ^{[1
,2
,4
]}

Kouwenhoven, L. P. ^{[1
,2
]}

Wimmer, M. ^{[1
,2
]}

机构：

[1] Delft Univ Technol, QuTech, NL-2600 GA Delft, Netherlands

[2] Delft Univ Technol, Kavli Inst Nanosci, NL-2600 GA Delft, Netherlands

[3] Leiden Univ, Inst Lorentz, NL-2300 RA Leiden, Netherlands

[4] Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands

来源：

PHYSICAL REVIEW B | 2015年 / 91卷 / 20期

关键词：

WEAK-LOCALIZATION; SUPERCONDUCTOR; RELAXATION; ELECTRONS;

D O I：

10.1103/PhysRevB.91.201413

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We use magnetoconductance measurements in dual-gated InSb nanowire devices, together with a theoretical analysis of weak antilocalization, to accurately extract spin-orbit strength. In particular, we show that magnetoconductance in our three-dimensional wires is very different compared to wires in two-dimensional electron gases. We obtain a large Rashba spin-orbit strength of 0.5-1 eV angstrom corresponding to a spin-orbit energy of 0.25-1 meV. These values underline the potential of InSb nanowires in the study of Majorana fermions in hybrid semiconductor-superconductor devices.

引用

页数：5

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