High-efficiency 970 nm multimode pumps

被引：20

作者：

Gapontsev, V ^{[1
]}

Berishev, I ^{[1
]}

Ellis, G ^{[1
]}

Komissarov, A ^{[1
]}

Moshegov, N ^{[1
]}

Raisky, O ^{[1
]}

Trubenko, P ^{[1
]}

Ackermann, V ^{[1
]}

Shcherbakov, E ^{[1
]}

Steinecke, J ^{[1
]}

Ovtchinnikov, A ^{[1
]}

机构：

[1] IPG Photon Corp, Oxford, MA 01540 USA

来源：

HIGH-POWER DIODE LASER TECHNOLOGY AND APPLICATIONS III | 2005年 / 5711卷

关键词：

multi-mode; InGaAs/GaAs; high power; highly efficient; fiber coupled; pump diode; reliability;

D O I：

10.1117/12.585907

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Ultra-reliable very efficient multimode diodes have been developed. 90 micrometer wide aperture chip-on-submount demonstrate 67% peak power conversion efficiency at 25 degrees C and 60% peak power efficiency at 85 degrees C heatsink temperature; while record high thermal limited peak power in excess of 15 W CW is achieved at 15 degrees C. State-of-the-art performance of Chip-on-Submount does not compromise its reliability; over 1,000,000 hours Mean Time Between Failures has been demonstrated. Cooler-less package design ensures thermal resistance of 4.5 degrees C/W from the Chip-on-Submount to external heatsink; coupling efficiency of 95% into 0.15 NA at over 5 W power in 100 mu m dia. fiber are routinely obtained. Results of multi-cell accelerated tests of packaged pumps yielded over 10 years of uninterrupted use MTBF at over 5W CW ex-fiber output.

引用

页码：42 / 51

页数：10

共 5 条

[1] BERISHEV I, 2005, SPIE P 0124, P5738
[2] GRUPP M, 2004, IND LASER SOLUTI MAY
[3] DPSSL and FL pumps based on 980nm-telecom pump laser technology:: Changing the industry
Lichtenstein, N
Schmidt, B
Fily, A
Weiss, S
Arlt, S
Pawlik, S
Sverdlov, B
Müller, J
Harder, C
[J]. HIGH-POWER DIODE LASER TECHNOLOGY AND APPLICATIONS II, 2004, 5336 : 77 - 83
[4] Rossin V., 2003, Compound Semiconductor, V9, P43
[5] Ultralow internal optical loss in separate-confinement quantum-well laser heterostructures
Slipchenko, SO
Vinokurov, DA
Pikhtin, NA
Sokolova, ZN
Stankevich, AL
Tarasov, IS
Alferov, ZI
[J]. SEMICONDUCTORS, 2004, 38 (12) : 1430 - 1439

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