Characterization of point defects in CdTe by positron annihilation spectroscopy

被引:5
|
作者
Elsharkawy, M. R. M. [1 ,2 ]
Kanda, G. S. [1 ]
Abdel-Hady, E. E. [2 ]
Keeble, D. J. [1 ]
机构
[1] Univ Dundee, Carnegie Lab Phys, SUPA Sch Sci & Engn, Dundee DD1 4HN, Scotland
[2] Menia Univ, Fac Sci, Dept Phys, POB 61519, Al Minya, Egypt
基金
英国工程与自然科学研究理事会;
关键词
VI COMPOUND SEMICONDUCTORS; LIFETIME SPECTROSCOPY; GRADIENT-CORRECTION; CADMIUM TELLURIDE; BULK CRYSTALS; VACANCY; IDENTIFICATION; GROWTH; SOLIDS; STATES;
D O I
10.1063/1.4953781
中图分类号
O59 [应用物理学];
学科分类号
摘要
Positron lifetime measurements on CdTe 0.15% Zn-doped by weight are presented, trapping to monovacancy defects is observed. At low temperatures, localization at shallow binding energy positron traps dominates. To aid defect identification density functional theory, calculated positron lifetimes and momentum distributions are obtained using relaxed geometry configurations of the monovacancy defects and the Te antisite. These calculations provide evidence that combined positron lifetime and coincidence Doppler spectroscopy measurements have the capability to identify neutral or negative charge states of the monovacancies, the Te antisite, A-centers, and divacancy defects in CdTe. (C) 2016 Author(s).
引用
收藏
页数:5
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