Source/drain contacts in organic polymer thin film transistors

被引：0
|
作者：
Martin, S [1 ]
Hamilton, MC [1 ]
Kanicki, J [1 ]
机构：
[1] Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA
来源：
ORGANIC AND POLYMERIC MATERIALS AND DEVICES | 2003年 / 771卷
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Organic polymer based thin-film transistors (OP-TFTs) look very promising for flexible organic electronics. In this paper, we describe devices based on a gate-planarized structure and using spin-coated organic polymer. We have analyzed the role of the device source and drain contacts and we present data indicating Schottky behavior of the contacts in OP-TFTs. In addition, we describe a quantitative evaluation of the source drain series resistances and extract the OP-TFT intrinsic electrical parameters.
引用
收藏
页码：163 / 168
页数：6
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