Optical studies of modulation doped InAs/GaAs quantum dots

被引：2
|
作者：
Maximov, MV
Ledentsov, NN
Tsatsul'nikov, AF
Ustinov, VM
Sakharov, AV
Volovik, BV
Krestnikov, IL
Zhen, Z
Brounkov, PN
Konnikov, SG
Kop'ev, PS
Belousov, MV
Turk, V
Bimberg, D
机构：
[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
[2] St Petersburg State Univ, Inst Phys, St Petersburg 198904, Russia
[3] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany
来源：
MICROELECTRONIC ENGINEERING | 1998年 / 43-4卷
基金：
俄罗斯基础研究基金会;
关键词：
modulation doping; quantum dot; photoluminescence excitation; InAs/GaAs;
D O I：
10.1016/S0167-9317(98)00223-8
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Photoluminescence and capacitance-voltage studies of modulation doped equilibrium quantum dots (QDs) formed by a 4ML InAs deposition in a GaAs matrix by molecular beam epitaxy have been performed. Two electron states are revealed in the n-type modulation-doped structures: due to QDs and due to InAs wetting layer. For the p-type modulation doped QDs the PL peak is shifted to higher energies due to high concentration of holes in a QD, there exist also a significant shift in the characteristic energy for the efficient excitation of the QD ground state, as compared to undoped QDs, which we attribute to the filling of the valence band sublevels with equilibrium holes. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：71 / 77
页数：7
相关论文
共 50 条
  • [1] Optical and Material Characteristics of InAs/GaAs Quantum Dots
    Huang, Sa
    Huang, Pin-Fang
    Feng, Zhe Chuan
    Brown, April
    Lu, Weijie
    NANOENGINEERING: FABRICATION, PROPERTIES, OPTICS, AND DEVICES V, 2008, 7039
  • [2] Optical and transport studies in coupled InAs quantum dots embedded in GaAs
    Inada, M
    Umezu, I
    Vaccaro, PO
    Yamada, S
    Sugimura, A
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2004, 21 (2-4) : 317 - 321
  • [3] Temperature dependence of electron redistribution in modulation-doped InAs/GaAs quantum dots
    Zhang, YC
    Huang, CJ
    Liu, FQ
    Xu, B
    Ding, D
    Jiang, WH
    Li, YF
    Ye, XL
    Wu, J
    Chen, YH
    Wang, ZG
    JOURNAL OF CRYSTAL GROWTH, 2000, 219 (03) : 199 - 204
  • [4] Local optical phenomena in InAs/GaAs heterostructures with quantum dots and artificial molecules
    Tománek, P
    Grmela, L
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2005, 47 : S162 - S165
  • [5] Strain effects on optical properties of pyramidal InAs/GaAs quantum dots
    Kuo, MK
    Lin, TR
    Liao, BT
    Yu, CH
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2005, 26 (1-4) : 199 - 202
  • [6] Comparison of quantum nature in InAs/GaAs quantum dots
    Jang, YD
    Lee, UH
    Lee, H
    Lee, D
    Kim, JS
    Leem, JY
    Noh, SK
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2003, 42 : S111 - S113
  • [7] Optical storage behaviour in InAs quantum dots embedded in GaAs quantum well structure
    Lu, Haidong
    Guo, Fangmin
    Zhang, Bing
    Ning, Wenguo
    MICRO & NANO LETTERS, 2016, 11 (10): : 623 - 626
  • [8] Morphology and composition of InAs/GaAs quantum dots
    Heun, S.
    Biasiol, G.
    Grillo, V.
    Carlino, E.
    Sorba, L.
    Golinelli, G. B.
    Locatelli, A.
    Mentes, T. O.
    Guo, F. Z.
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2007, 7 (06) : 1721 - 1725
  • [9] Optical characteristics of InAs quantum dots influenced by AlGaAs/GaAs superlattice barriers
    Choi, H
    Jeong, Y
    Park, Y
    Lee, J
    Leem, JY
    Jeon, M
    NANOTECH 2003, VOL 2, 2003, : 44 - 47
  • [10] Photoluminescence in Si and Be directly doped self-organized InAs/GaAs quantum dots
    Wang, HL
    Yang, FH
    Feng, SL
    JOURNAL OF CRYSTAL GROWTH, 2000, 212 (1-2) : 35 - 38
12345