Optical studies of modulation doped InAs/GaAs quantum dots

被引：2
|
作者：
Maximov, MV
Ledentsov, NN
Tsatsul'nikov, AF
Ustinov, VM
Sakharov, AV
Volovik, BV
Krestnikov, IL
Zhen, Z
Brounkov, PN
Konnikov, SG
Kop'ev, PS
Belousov, MV
Turk, V
Bimberg, D
机构：
[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
[2] St Petersburg State Univ, Inst Phys, St Petersburg 198904, Russia
[3] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany
来源：
MICROELECTRONIC ENGINEERING | 1998年 / 43-4卷
基金：
俄罗斯基础研究基金会;
关键词：
modulation doping; quantum dot; photoluminescence excitation; InAs/GaAs;
D O I：
10.1016/S0167-9317(98)00223-8
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Photoluminescence and capacitance-voltage studies of modulation doped equilibrium quantum dots (QDs) formed by a 4ML InAs deposition in a GaAs matrix by molecular beam epitaxy have been performed. Two electron states are revealed in the n-type modulation-doped structures: due to QDs and due to InAs wetting layer. For the p-type modulation doped QDs the PL peak is shifted to higher energies due to high concentration of holes in a QD, there exist also a significant shift in the characteristic energy for the efficient excitation of the QD ground state, as compared to undoped QDs, which we attribute to the filling of the valence band sublevels with equilibrium holes. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：71 / 77
页数：7
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