Atmospheric pressure chemical vapour deposition of selenium films by KrF laser photolysis of dimethyl selenium

被引：8

作者：

Pola, J

Bastl, Z

Subrt, J

Ouchi, A

机构：

[1] Acad Sci Czech Republ, Inst Chem Proc Fundamentals, CR-16502 Prague 6, Czech Republic

[2] Acad Sci Czech Republ, J Heyrovsky Inst Phys Chem, CR-18223 Prague, Czech Republic

[3] Acad Sci Czech Republ, Inst Inorgan Chem, CZ-25068 Rez, Czech Republic

[4] MITI, AIST, Natl Inst Mat & Chem Res, Tsukuba, Ibaraki 3058565, Japan

来源：

APPLIED SURFACE SCIENCE | 2001年 / 172卷 / 3-4期

基金：

日本科学技术振兴机构;

关键词：

selenium films; laser-induced photolysis; dimethyl selenium;

D O I：

10.1016/S0169-4332(00)00851-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

KrF laser-induced photolysis of gaseous dimethyl selenium in excess of helium is controlled by cleavage of both Se-C bonds and affords ethane as a very dominant gaseous product together with elemental selenium, The photolysis mechanism being different from that of thermolysis shows potential for chemical vapour deposition of selenium films not contaminated with carbon impurities. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：220 / 224

页数：5