In2S3-NiS co-decorated MoO3@MoS2 composites for enhancing the solar-light induced CO2 photoreduction activity

被引:15
作者
Zheng, Xiaogang [1 ]
Wang, Heju [1 ]
Wen, Jing [2 ]
Peng, Hao [3 ]
机构
[1] Neijiang Normal Univ, Coll Chem & Chem Engn, Neijiang 641100, Sichuan, Peoples R China
[2] Chinese Acad Sci, Qinghai Inst Salt Lakes, Key Lab Comprehens & Highly Efficient Utilizat Sa, Key Lab Salt Lake Resources Chem Qinghai Prov, Xining 810008, Qinghai, Peoples R China
[3] Yangtze Normal Univ, Coll Chem & Chem Engn, Chongqing 408100, Peoples R China
关键词
MoO3@MoS2; In2S3-NiS co-decorating; In-situ sulfurization; CO2; photoreduction; PHOTO-FENTON DEGRADATION; IN-SITU SYNTHESIS; PHOTOCATALYTIC ACTIVITY; HYDROGEN-PRODUCTION; ATOMIC-SCALE; HETEROJUNCTION; PERFORMANCE; DRIVEN; TETRACYCLINE; NANOSHEETS;
D O I
10.1016/j.ijhydene.2021.08.161
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
In2S3-NiS co-decorated MoO3@MoS2 (INS/MoO3@MoS2) heterojunctions were prepared in nonthermal plasma via the in-situ sulfurization for enhancing the solar-light photocatalytic conversion of CO2 into CH4 and CO at 423 K. In contrast with hexagonal h-MoO3 nanorods, CH4 and CO yields were enhanced by h-MoO3@MoS2 and In2S3/MoO3@MoS2, while the increased CH4 yield and decreased CO yield were obtained by INS/MoO3@MoS2 and NiS/MoO3@MoS2. The optimal 3-INS/MoO3@MoS2 with a nominal NiS-In2S3 content of 5.0 wt% and a In/Ni molar ratio of 2:1 exhibited the best photoreduction activity of CO2, of which CH4 and CO yields were 49.11 and 6.19 mmol g-1 h-1, respectively. It's ascribed to the tight interface for enhancing the visible-light absorption capacity and reinforcing the transfer and separation of charge carriers. S-rich sites and O vacancies were favorable for the adsorption and photoreduction of reactants on the bulks surface. The nonthermal plasma induced in-situ sulfurization was thus a promising route to fabricate metal sulfides-based heterojunctions. (c) 2021 Hydrogen Energy Publications LLC. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码:36848 / 36858
页数:11
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