Tunable multiferroic properties of Mn substituted BiFeO3 thin films

被引:32
|
作者
Singh, Kirandeep [1 ,2 ]
Singh, Sushil Kumar [3 ]
Kaur, Davinder [1 ,2 ]
机构
[1] Indian Inst Technol Roorkee, Dept Phys, Funct Nanomat Res Lab, Roorkee 247667, Uttarakhand, India
[2] Indian Inst Technol Roorkee, Ctr Nanotechnol, Roorkee 247667, Uttarakhand, India
[3] DRDO, Solid State Phys Lab SSPL, Funct Mat Div, Lucknow Rd, Delhi 110054, India
关键词
Thin films; X-ray diffraction; Leakage; Magnetization; FERROELECTRIC PROPERTIES; DOPED BIFEO3; CONDUCTION MECHANISM; PHYSICS;
D O I
10.1016/j.ceramint.2016.05.124
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The current study explored the influence of Mn substitution on the electrical and magnetic properties of BiFeO3 (BFO) thin films synthesized using low cost chemical solution deposition technique. X-ray diffraction analysis revealed that pure rhombohedral phase of BiFeO3 was transformed to the tetragonal structure with P4mm symmetry on Mn substitution. A leakage current density of 5.7 x 10(-4) A/cm(2) which is about two orders of magnitude lower than pure BFO was observed in 3% Mn doped BFO thin film at an external electric field >400 kV/cm. A well saturated (p-E) loops with saturation polarization (P-sat) and remanent polarization (2P(r)) as high as 60.34 mu C/cm(2) and 25.06 mu C/cm(2) were observed in 10% Mn substituted BFO thin films. An escalation in dielectric tunability (n(r)), figure of merit (K) and quality factor (Q) were observed in suitable Mn doped BFO thin films. The magnetic measurement revealed that Mn substituted BFO thin films showed a large saturation magnetization compared to pure BFO thin film. The highest saturation similar to 31 emu/cc was observed for 3% Mn substituted BFO thin films. (C) 2016 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
引用
收藏
页码:13432 / 13441
页数:10
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