Investigation of silicon structures with periodically varying porosity by x-ray diffractometry methods

被引：1

作者：

Irzhak, D. V. ^{[1
]}

Roshchupkin, D. V. ^{[1
]}

Starkov, V. V. ^{[1
]}

Fakhrtdinov, R. R. ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Microelect Technol & High Pur Mat, Chernogolovka 142432, Moscow Oblast, Russia

来源：

JOURNAL OF SURFACE INVESTIGATION-X-RAY SYNCHROTRON AND NEUTRON TECHNIQUES | 2010年 / 4卷 / 06期

基金：

俄罗斯基础研究基金会;

关键词：

Porous Silicon; Surface Investigation; Porous Layer; Neutron Technique; Amorphous Layer;

D O I：

10.1134/S1027451010060121

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The features of formation of silicon structures with a periodically varying porosity are investigated by X-ray diffractometry. It is revealed that the magnitude of anode current density corresponding to the formation of a layer with higher porosity that is part of a multilayer porous structure also affects the porosity of a second, less porous layer. As time elapses, the single-crystalline matrix of which porous layers consist is amorphized and a structure consisting of amorphous layers with a periodically varying density arises.

引用

页码：947 / 950

页数：4

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