Enhanced Output Power of Near-Ultraviolet InGaN/AlGaN LEDs With Patterned Distributed Bragg Reflectors

被引：20
作者：
Lin, Wen-Yu [1 ]
Wuu, Dong-Sing [1 ]
Huang, Shih-Cheng [1 ]
Horng, Ray-Hua [2 ,3 ]
机构：
[1] Natl Chung Hsing Univ, Dept Mat Sci & Engn, Taichung 402, Taiwan
[2] Natl Cheng Kung Univ, Dept Electroopt Engn, Tainan 701, Taiwan
[3] Natl Chung Hsing Univ, Inst Precis Engn, Taichung 402, Taiwan
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2011年 / 58卷 / 01期
关键词：
AlGaN; distributed Bragg reflector (DBR); GaN; InGaN; light-emitting diode (LED); near-ultraviolet (UV); LIGHT-EMITTING-DIODES; LATERAL-OVERGROWN GAN; INGAN; SAPPHIRE; DIFFRACTION; EFFICIENCY; MECHANISM; FILMS; CHIP;
D O I：
10.1109/TED.2010.2084579
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A 400-nm near-ultraviolet InGaN/AlGaN light-emitting diode (LED) with a patterned distributed Bragg reflector (PDBR) mask is the subject of this paper. The design of the PDBR mask on the GaN/sapphire substrate attempts to reduce the threading dislocation density in the epitaxial template and enhance light extraction efficiency via the reflective behavior of the DBR. Under an injection current of 20 mA, the forward voltages of the PDBR and conventional LEDs were 3.51 and 3.52 V, respectively. This result indicates that the operating voltage of the PDBR LED does not arise by this PDBR mask design. In addition, the leakage current of the PDBR LED sample (1.36 nA at -5 V) is found to be lower than that of the conventional LED (11 nA). We also discovered that the light output power for the PDBR LED was approximately 39% higher (at 20 mA) than the conventional LED, and this significant improvement in performance is attributed not only to the GaN template crystalline quality reform but also due to the light extraction enhancement via the PDBR mask.
引用
收藏
页码：173 / 179
页数：7
相关论文
共 24 条
[1]   Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a SiO2 nanorod-array patterned sapphire template [J].
Chiu, C. H. ;
Yen, H. H. ;
Chao, C. L. ;
Li, Z. Y. ;
Yu, Peichen ;
Kuo, H. C. ;
Lu, T. C. ;
Wang, S. C. ;
Lau, K. M. ;
Cheng, S. J. .
APPLIED PHYSICS LETTERS, 2008, 93 (08)
[2]  
Cullity B. D., 2001, ELEMENTS XRAY DIFFRA, P400
[3]   Buried tungsten metal structure fabricated by epitaxial-lateral-overgrown GaN via low-pressure metalorganic vapor phase epitaxy [J].
Haino, M ;
Yamaguchi, M ;
Miyake, H ;
Motogaito, A ;
Hiramatsu, K ;
Kawaguchi, Y ;
Sawaki, N ;
Iyechika, Y ;
Maeda, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2000, 39 (5B) :L449-L452
[4]   Formation chemistry of high-density nanocraters on the surface of sapphire substrates with an in situ etching and growth mechanism of device-quality GaN films on the etched substrates [J].
Hao, M ;
Ishikawa, H ;
Egawa, T .
APPLIED PHYSICS LETTERS, 2004, 84 (20) :4041-4043
[5]  
Heying B, 1996, APPL PHYS LETT, V68, P643, DOI 10.1063/1.116495
[6]   Crystal orientation fluctuation of epitaxial-lateral-overgrown GaN with W mask and SiO2 mask observed by transmission electron diffraction and X-ray rocking curves [J].
Honda, Y ;
Iyechika, Y ;
Maeda, T ;
Miyake, H ;
Hiramatsu, K ;
Sone, H ;
Sawaki, N .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1999, 38 (11B) :L1299-L1302
[7]   Optical and Structural Properties of InGaN-AlGaN Ultraviolet Light-Emitting Diodes [J].
Kim, Sang-Mook ;
Kim, Jae Bum ;
Ain, Junggeun ;
Baek, Jong Hyeob ;
Lee, In Hwan ;
Jung, Gun Young .
IEEE PHOTONICS TECHNOLOGY LETTERS, 2008, 20 (21-24) :1911-1913
[8]   Nitride-Based LEDs With Phosphoric Acid Etched Undercut Sidewalls [J].
Kuo, D. S. ;
Chang, Shoou-Jinn ;
Ko, T. K. ;
Shen, C. F. ;
Hon, S. J. ;
Hung, S. C. .
IEEE PHOTONICS TECHNOLOGY LETTERS, 2009, 21 (08) :510-512
[9]   Enhanced emission efficiency of GaN/InGaN multiple quantum well light-emitting diode with an embedded photonic crystal [J].
Kwon, Min-Ki ;
Kim, Ja-Yeon ;
Park, Il-Kyu ;
Kim, Ki Seok ;
Jung, Gun-Young ;
Park, Seong-Ju ;
Kim, Je Won ;
Kim, Yong Chun .
APPLIED PHYSICS LETTERS, 2008, 92 (25)
[10]   Stress Reduction and Enhanced Extraction Efficiency of GaN-Based LED Grown on Cone-Shape-Patterned Sapphire [J].
Lee, Jae-Hoon ;
Oh, J. T. ;
Kim, Y. C. ;
Lee, Jung-Hee .
IEEE PHOTONICS TECHNOLOGY LETTERS, 2008, 20 (17-20) :1563-1565
123