Effects of environment on modulus of low-k porous films used in back end of line

被引：0

作者：

Simonyi, Eva E. ^{[1
]}

Dimitrakopoulos, Christos D. ^{[1
]}

Lane, Michael ^{[1
]}

Liniger, Eric ^{[1
]}

Volksen, Willi ^{[2
]}

机构：

[1] IBM Corp, TJ Watson Res Ctr, 1101 Kitchawan Rd, Yorktown Hts, NY 10598 USA

[2] IBM Corp, Almaden Res Ctr, San Jose, CA 95120 USA

来源：

MATERIALS, PROCESSES, INTEGRATION AND RELIABILITY IN ADVANCED INTERCONNECTS FOR MICRO- AND NANOELECTRONICS | 2007年 / 990卷

关键词：

D O I：

暂无

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Reliability is an important requirement for newly developed porous low-k interlayer dielectric (ILD) materials that are being introduced into the back-end-of-line (BEOL). Dependence of Young's moduli, as measured by nanoindentation technique, on the environmental factors, such as high relative humidity, water immersion and thermal recovery is presented along with FT-IR spectra for films with different k values. The effect of the moduli changes on cracking behavior is also discussed.

引用

页码：57 / 65

页数：9

共 8 条

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