X-ray diffraction study of AlN/AlGaN short period superlattices

被引：14

作者：

Chandolu, A. ^{[1
]}

Nikishin, S. ^{[1
]}

Holtz, M. ^{[1
]}

Temkin, H. ^{[1
]}

机构：

[1] Texas Tech Univ, Nano Tech Ctr, Lubbock, TX 79409 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2007年 / 102卷 / 11期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2821358

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Short period superlattices of AlN/Al0.08Ga0.92N with the average AlN content over 60% have been investigated by high resolution x-ray diffraction. The a and c lattice constants verify these structures to be strain relaxed. Monolayer-level interface roughness, caused by the presence of threading dislocations and step-flow growth mode, is simulated and directly compared with the zeroth and +/- 1 satellite peak positions of the rocking curves. It was found that the observed x-ray diffraction data can be adequately described by considering primarily the presence of screw dislocations and step-flow growth mode. (C) 2007 American Institute of Physics.

引用

页数：5

共 37 条

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