X-ray diffraction study of AlN/AlGaN short period superlattices

被引：14

作者：

Chandolu, A. ^{[1
]}

Nikishin, S. ^{[1
]}

Holtz, M. ^{[1
]}

Temkin, H. ^{[1
]}

机构：

[1] Texas Tech Univ, Nano Tech Ctr, Lubbock, TX 79409 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2007年 / 102卷 / 11期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2821358

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Short period superlattices of AlN/Al0.08Ga0.92N with the average AlN content over 60% have been investigated by high resolution x-ray diffraction. The a and c lattice constants verify these structures to be strain relaxed. Monolayer-level interface roughness, caused by the presence of threading dislocations and step-flow growth mode, is simulated and directly compared with the zeroth and +/- 1 satellite peak positions of the rocking curves. It was found that the observed x-ray diffraction data can be adequately described by considering primarily the presence of screw dislocations and step-flow growth mode. (C) 2007 American Institute of Physics.

引用

页数：5

共 37 条

[1] Growth and optical properties of GaN/AlN quantum wells [J].

Adelmann, C ;

Sarigiannidou, E ;

Jalabert, D ;

Hori, Y ;

Rouvière, JL ;

Daudin, B ;

Fanget, S ;

Bru-Chevallier, C ;

Shibata, T ;

Tanaka, M .

APPLIED PHYSICS LETTERS, 2003, 82 (23) :4154-4156

[2] Atomic and electronic structure of mixed and partial dislocations in GaN [J].

Arslan, I ;

Bleloch, A ;

Stach, EA ;

Browning, ND .

PHYSICAL REVIEW LETTERS, 2005, 94 (02)

[3]

BRIOT O, 2001, MATER RES SOC S P, V639, P1

[4] Observation of coreless edge and mixed dislocations in Mg-doped Al0.03Ga0.97N [J].

Cherns, D ;

Wang, YQ ;

Liu, R ;

Ponce, FA .

APPLIED PHYSICS LETTERS, 2002, 81 (24) :4541-4543

[5] Microstructure of heteroepitaxial GaN revealed by x-ray diffraction [J].

Chierchia, R ;

Böttcher, T ;

Heinke, H ;

Einfeldt, S ;

Figge, S ;

Hommel, D .

JOURNAL OF APPLIED PHYSICS, 2003, 93 (11) :8918-8925

[6] Microstructure and composition analysis of group III nitrides by X-ray scattering [J].

Fewster, PF ;

Andrew, NL ;

Foxon, CT .

JOURNAL OF CRYSTAL GROWTH, 2001, 230 (3-4) :398-404

[7]

Heinke H, 1999, PHYS STATUS SOLIDI A, V176, P391, DOI 10.1002/(SICI)1521-396X(199911)176:1<391::AID-PSSA391>3.0.CO

[8]

2-I

[9] X-ray diffraction analysis of the defect structure in epitaxial GaN [J].

Heinke, H ;

Kirchner, V ;

Einfeldt, S ;

Hommel, D .

APPLIED PHYSICS LETTERS, 2000, 77 (14) :2145-2147

[10]

HENDRICKS SB, 1955, AM MINERAL, V40, P139

← 1 2 3 4 →