Structural and electronic properties of low dielectric constant fluorinated amorphous carbon films

被引:112
|
作者
Ma, YJ
Yang, HN
Guo, J
Sathe, C
Agui, A
Nordgren, J
机构
[1] Sharp Microelect Technol Inc, Camas, WA 98607 USA
[2] Uppsala Univ, Dept Phys, Uppsala, Sweden
关键词
D O I
10.1063/1.121601
中图分类号
O59 [应用物理学];
学科分类号
摘要
Fluorinated amorphous carbon (a-CFx) films were studied by high-resolution x-ray absorption, emission, and photoelectron spectroscopy. The composition and local bonding information were obtained and correlated with substrate temperature during deposition. The data suggest that the structure of the a-CFx is mostly of carbon rings connected by CF2 groups. The cross linking increases with substrate temperature. (C) 1998 American Institute of Physics. [S0003-6951(98)04525-2].
引用
收藏
页码:3353 / 3355
页数:3
相关论文
共 50 条
  • [21] Spectral characterization of amorphous fluorinated carbon film with a low dielectric constant
    Ding, SJ
    Wang, PF
    Zhang, W
    Wang, JT
    Wei, WL
    SPECTROSCOPY AND SPECTRAL ANALYSIS, 2001, 21 (06) : 745 - 748
  • [22] Controlling fluorine concentration of fluorinated amorphous carbon thin films for low dielectric constant interlayer dielectrics
    Endo, K
    Tatsumi, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1997, 36 (11B): : L1531 - L1533
  • [23] Changes in structure and nature of defects by annealing of fluorinated amorphous carbon thin films with low dielectric constant
    Yokomichi, H
    Hayashi, T
    Masuda, A
    APPLIED PHYSICS LETTERS, 1998, 72 (21) : 2704 - 2706
  • [24] Effect of CF4 plasma treatment on fluorinated amorphous carbon films with a low dielectric constant
    Ko, Ho Jeong
    Lee, Heon Ju
    Lee, Kwang-Man
    Choi, Chi Kyn
    JOURNAL OF CERAMIC PROCESSING RESEARCH, 2006, 7 (02): : 172 - 176
  • [25] Controlling fluorine concentration of fluorinated amorphous carbon thin films for low dielectric constant interlayer dielectrics
    Endo, Kazuhiko
    Tatsumi, Toru
    Japanese Journal of Applied Physics, Part 2: Letters, 1997, 36 (11 B):
  • [26] Characterization of low dielectric constant amorphous carbon nitride films
    Aono, M
    Nitta, S
    Katsuno, T
    Itoh, T
    Nonomura, S
    APPLIED SURFACE SCIENCE, 2000, 159 : 341 - 344
  • [27] Copper damascene using low dielectric constant fluorinated amorphous carbon interlayer
    Matsubara, Y
    Endo, K
    Iguchi, M
    Ito, N
    Aoyama, K
    Tatsumi, T
    Horiuchi, T
    LOW-DIELECTRIC CONSTANT MATERIALS IV, 1998, 511 : 291 - 296
  • [28] Fluorinated amorphous carbon: A low dielectric constant material for multilevel interconnect applications.
    Zhu, W
    Pai, CS
    Bair, HE
    Krautter, HW
    Dennis, BS
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1999, 218 : U629 - U629
  • [29] Amorphous carbon nitride films as a candidate for low dielectric constant materials
    Aono, M
    Nitta, S
    Iwasaki, T
    Yokoi, H
    Itoh, T
    Nonomura, S
    LOW-DIELECTRIC CONSTANT MATERIALS V, 1999, 565 : 291 - 296
  • [30] Effect of post-plasma treatment power on the properties of low dielectric fluorinated amorphous carbon films
    Yang, SH
    Park, JW
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2001, 39 : S341 - S344