SPICE Simulation of RRAM-Based Cross-Point Arrays Using the Dynamic Memdiode Model

被引:9
作者
Aguirre, Fernando L. [1 ,2 ,3 ]
Pazos, Sebastian M. [1 ,2 ]
Palumbo, Felix [1 ,2 ]
Sune, Jordi [3 ]
Miranda, Enrique [3 ]
机构
[1] Univ Tecnol Nacl, Fac Reg Buenos Aires, Unidad Invest & Desarrollo Ingn, Buenos Aires, DF, Argentina
[2] Consejo Nacl Invest Cient & Tecn, Buenos Aires, DF, Argentina
[3] Univ Autonoma Barcelona, Dept Engn Elect, Barcelona, Spain
关键词
RRAM; resistive switching; cross-point; memristor; neuromorphic; pattern recognition; write-verify; frequency; NEURAL-NETWORK; LINE RESISTANCE; COMPACT MODEL; DEVICE; MEMRISTORS; FREQUENCY; VOLTAGE; CONDUCTIVITY; RESISTIVITY; MECHANISM;
D O I
10.3389/fphy.2021.735021
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We thoroughly investigate the performance of the Dynamic Memdiode Model (DMM) when used for simulating the synaptic weights in large RRAM-based cross-point arrays (CPA) intended for neuromorphic computing. The DMM is in line with Prof. Chua's memristive devices theory, in which the hysteresis phenomenon in electroformed metal-insulator-metal structures is represented by means of two coupled equations: one equation for the current-voltage characteristic of the device based on an extension of the quantum point-contact (QPC) model for dielectric breakdown and a second equation for the memory state, responsible for keeping track of the previous history of the device. By considering ex-situ training of the CPA aimed at classifying the handwritten characters of the MNIST database, we evaluate the performance of a Write-Verify iterative scheme for setting the crosspoint conductances to their target values. The total programming time, the programming error, and the inference accuracy obtained with such writing scheme are investigated in depth. The role played by parasitic components such as the line resistance as well as some CPA's particular features like the dynamical range of the memdiodes are discussed. The interrelationship between the frequency and amplitude values of the write pulses is explored in detail. In addition, the effect of the resistance shift for the case of a CPA programmed with no errors is studied for a variety of input signals, providing a design guideline for selecting the appropriate pulse's amplitude and frequency.
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页数:19
相关论文
共 95 条
[21]   Complementary resistive switching in single sandwich structure for crossbar memory arrays [J].
Duan, W. J. ;
Wang, J. B. ;
Zhong, X. L. ;
Song, H. J. ;
Li, B. .
JOURNAL OF APPLIED PHYSICS, 2016, 120 (08)
[22]  
Eshraghian JK, 2019, 2019 IEEE INTERNATIONAL CONFERENCE ON ARTIFICIAL INTELLIGENCE CIRCUITS AND SYSTEMS (AICAS 2019), P267, DOI [10.1109/aicas.2019.8771550, 10.1109/AICAS.2019.8771550]
[23]   Memristive Device Fundamentals and Modeling: Applications to Circuits and Systems Simulation [J].
Eshraghian, Kamran ;
Kavehei, Omid ;
Cho, Kyoung-Rok ;
Chappell, James M. ;
Iqbal, Azhar ;
Al-Sarawi, Said F. ;
Abbott, Derek .
PROCEEDINGS OF THE IEEE, 2012, 100 (06) :1991-2007
[24]   Mask Technique for Fast and Efficient Training of Binary Resistive Crossbar Arrays [J].
Fouda, Mohammed E. ;
Lee, Sugil ;
Lee, Jongeun ;
Eltawil, Ahmed ;
Kurdahi, Fadi .
IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2019, 18 :704-716
[25]   Storage-class memory: The next storage system technology [J].
Freitas, R. F. ;
Wilcke, W. W. .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 2008, 52 (4-5) :439-447
[26]   Hafnium oxide and tantalum oxide based resistive switching structures for realization of minimum and maximum functions [J].
Frohlich, Karol ;
Kundrata, Ivan ;
Blaho, Michal ;
Precner, Marian ;
Tapajna, Milan ;
Klimo, Martin ;
Such, Ondrej ;
Skvarek, Ondrej .
JOURNAL OF APPLIED PHYSICS, 2018, 124 (15)
[27]   The conductivity of thin metallic films according to the electron theory of metals [J].
Fuchs, K .
PROCEEDINGS OF THE CAMBRIDGE PHILOSOPHICAL SOCIETY, 1938, 34 :100-108
[28]   Acceleration of Deep Neural Network Training with Resistive Cross-Point Devices: Design Considerations [J].
Gokmen, Tayfun ;
Vlasov, Yurii .
FRONTIERS IN NEUROSCIENCE, 2016, 10
[29]   A new compact model for bipolar RRAMs based on truncated-cone conductive filaments-a Verilog-A approach [J].
Gonzalez-Cordero, G. ;
Roldan, J. B. ;
Jimenez-Molinos, F. ;
Sune, J. ;
Long, S. ;
Liu, M. .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2016, 31 (11)
[30]   Low-Power VDD/3 Write Scheme With Inversion Coding Circuit for Complementary Memristor Array [J].
Ham, Seok-Jin ;
Mo, Hyun-Sun ;
Min, Kyeong-Sik .
IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2013, 12 (05) :851-857