Effect of Surface Variations on the Performance of Yttria Based Memristive System

被引：21
作者：
Das, Mangal [1 ]
Kumar, Amitesh [1 ]
Kumar, Sanjay [1 ]
Mandal, Biswajit [1 ]
Khan, Md Arif [1 ]
Mukherjee, Shaibal [1 ]
机构：
[1] IIT Indore, Elect Engn, HNRG, Indore 453552, Madhya Pradesh, India
来源：
IEEE ELECTRON DEVICE LETTERS | 2018年 / 39卷 / 12期
关键词：
Grain boundary; grain size; yttria; memristor; dielectrics;
D O I：
10.1109/LED.2018.2878953
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effect of the statistical distribution of the grain surface area on the variations of switching voltages (set/reset or both) has been discussed in this report. Dual ion beam sputtered yttria-based memristive devices show unipolar and bipolar resistive switching (RS) for amorphous thin-film and polycrystalline thin-film devices, respectively. Field emission scanning electron microscope image analysis techniques reveal that the standard deviation (SD) of the switching voltages is directly correlated with the SD of grain surface area of oxide layers. It is found that devices with the amorphous thin film have a smaller SD of the switching voltages than polycrystalline thin-film devices. The endurance measurement of the device with amorphous oxide layer indicates highly reliable and reproducible RS characteristics for similar to 23 000 switching cycles.
引用
收藏
页码：1852 / 1855
页数：4
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