Shape memory effect in sputtered Ti-Ni thin films

被引:7
作者
Arranz, MA [1 ]
Riveiro, JM [1 ]
机构
[1] Univ Castilla La Mancha, Fac Ciencias Quim, Dept Fis Aplicada, E-13071 Ciudad Real, Spain
关键词
TiNi films; shape memory; martensitic transformation; microstructure; electrical resistivity;
D O I
10.1016/j.jmmm.2004.11.396
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The microstructure and electrical transport properties of Ti-Ni granular films have been investigated with X-ray diffraction and DC resistivity measurements, respectively. Samples with the eutectoid composition (similar to 50 at% Ni) were grown by RF magnetron sputtering on a heated sample holder. These films comprised Ti2Ni, TiNi3 and TiNi granular phases, their relative proportions and microstructures critically depending on the substrate temperature. A majoritary metastable TiNi phase was obtained in samples grown at temperatures above 600 degrees, as inferred from the discussion of the X-ray diffraction plots. These crystalline films showed the hysteretic behaviour of the electrical resistance which is attributed to the characteristic shape memory effect of such a binary alloy. Besides, the DC resistivity measurements are accomplished in Joule-heated samples by which efficiently modify their microgranular structure from amorphous to crystalline. or even stabilize the TiNi phase after a flash annealing. (c) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:865 / 867
页数:3
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