Design of X-Band Pulsed Power Amplifier & Downconverter

被引：0

作者：

Kumar, Anirudh ^{[1
]}

Pai, Priyanka ^{[1
]}

Kavitha, V ^{[1
]}

Prashanth, S. ^{[2
]}

机构：

[1] Bharat Elect Ltd, REMW PDIC, Bangalore 560013, Karnataka, India

[2] Bharat Elect Ltd, NS2 BGCx, Bangalore 560013, Karnataka, India

来源：

2021 IEEE MTT-S INTERNATIONAL MICROWAVE AND RF CONFERENCE (IMARC) | 2021年

关键词：

Power Amplifier (PA); Local Oscillator (LO); Intermediate Frequency (IF); Microwave Sensitivity Timing control (MSTC) & Automatic Gain Control (AGC); Transmit (Tx); Receive (Rx);

D O I：

10.1109/IMaRC49196.2021.9714583

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the design features, simulation & implementation of a X-band Pulsed Power Amplifier and down converter using double down conversion technique in a single mechanical housing. This module has been designed & tested for various features like high output power, high gain in PA section & low noise figure, excellent image rejection, high gain, MSTC, AGC & BITE check in Down converter section. Module is designed, fabricated & tested successfully and is meeting all the required specifications. A close match is achieved between the simulated & tested results. Mean Time Between Failure (MTBF) is predicted to be 13530Hrs.

引用

页数：4

共 50 条

[41] A High Efficiency MMIC X-Band GaN Power Amplifier [J].

Ayad, Mohammed ;

Poitrenaud, Nicolas ;

Serru, Veronique ;

Camiade, Marc ;

Gruenenpuett, Jan ;

Riepe, Klaus J. .

2020 50TH EUROPEAN MICROWAVE CONFERENCE (EUMC), 2020,

[42] An X-band RF-input Outphasing Power Amplifier [J].

Martin, Daniel N. ;

Cappello, Tommaso ;

Litchfield, Michael ;

Barton, Taylor W. .

2018 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM - IMS, 2018, :308-311

[43] Design and Implementation of an X-band Limiter Low Noise Amplifier [J].

Ni, Dahai ;

Chen, Jinwei ;

Yin, Hongbo ;

Chen, Kun ;

Lu, Yunfeng ;

Zhang, Decai .

2024 IEEE INTERNATIONAL SYMPOSIUM ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY, RFIT, 2024,

[44] Design of an X-Band Gigawatt Multibeam Relativistic Klystron Amplifier [J].

Liu, Zhenbang ;

Huang, Hua ;

Jin, Xiao ;

Lei, Lurong .

IEEE TRANSACTIONS ON PLASMA SCIENCE, 2014, 42 (10) :3419-3422

[45] Design of X-band 40 W Pulse-Driven GaN HEMT Power Amplifier [J].

Jeong, Hae-Chang ;

Oh, Hyun-Seok ;

Ahmed, Abdul-Rahman ;

Yeom, Kyung-Whan .

2012 ASIA-PACIFIC MICROWAVE CONFERENCE (APMC 2012), 2012, :466-468

[46] Design of X-band GaN high-efficiency continuous class B power amplifier [J].

Jin C. ;

Chen W. ;

Wang Z. ;

Yu F. .

Harbin Gongye Daxue Xuebao/Journal of Harbin Institute of Technology, 2021, 53 (06) :77-85

[47] A Design of X-Band 40 W Pulse-Driven GaN HEMT Power Amplifier [J].

Jeong, Hae-Chang ;

Yeom, Kyung-Whan .

IEICE TRANSACTIONS ON ELECTRONICS, 2013, E96C (06) :923-934

[48] Design of High-Efficiency Class F GaN HEMT Power Amplifier for X-Band [J].

Zhu, Shanren ;

Tang, Shijun ;

Zhao, Liang ;

Ma, Yunbo .

2024 INTERNATIONAL CONFERENCE ON MICROWAVE AND MILLIMETER WAVE TECHNOLOGY, ICMMT, 2024,

[49] An X-band GaNHEMT power amplifier design using an artificial neural network modeling technique [J].

Lee, SY ;

Cetiner, BA ;

Torpi, H ;

Cai, SJ ;

Li, J ;

Alt, K ;

Chen, YL ;

Wen, CP ;

Wang, KL ;

Itoh, T .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (03) :495-501

[50] An X-Band SiGe Driver Amplifier [J].

Terlemez, Hasip ;

Palamutcuogullari, Osman .

2013 8TH INTERNATIONAL CONFERENCE ON ELECTRICAL AND ELECTRONICS ENGINEERING (ELECO), 2013, :341-343

← 1 2 3 4 5 →