Low Exciton-Phonon Coupling, High Charge Carrier Mobilities, and Multiexciton Properties in Two-Dimensional Lead, Silver, Cadmium, and Copper Chalcogenide Nanostructures

被引:10
|
作者
Ding, Yuchen [1 ]
Singh, Vivek [2 ]
Goodman, Samuel M. [2 ]
Nagpal, Prashant [2 ,3 ,4 ]
机构
[1] Univ Colorado, Dept Chem & Biochem, Boulder, CO 80303 USA
[2] Univ Colorado, Dept Chem & Biol Engn, Boulder, CO 80303 USA
[3] Univ Colorado, Renewable & Sustainable Energy Inst RASEI, Boulder, CO 80303 USA
[4] Univ Colorado, Boulder, CO 80303 USA
来源
JOURNAL OF PHYSICAL CHEMISTRY LETTERS | 2014年 / 5卷 / 24期
基金
美国国家科学基金会;
关键词
TEMPERATURE-DEPENDENCE; NANOCRYSTALS; TRANSPORT; SELENIDE; LINE;
D O I
10.1021/jz5023015
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The development of two-dimensional (2D) nanomaterials has revealed novel physical properties, like high carrier mobilities and the tunable coupling of charge carriers with phonons, which can enable wide-ranging applications in optoelectronic and thermoelectric devices. While mechanical exfoliation of graphene and some transition metal dichalcogenides (e.g., MoS2, WSe2) has enabled their fabrication as 2D semiconductors and integration into devices, lack of similar syntheses for other 2D semiconductor materials has hindered further progress. Here, we report measurements of fundamental charge carrier interactions and optoelectronic properties of 2D nanomaterials made from two-monolayers-thick PbX, CdX, Cu2X, and Ag2X (X = S, Se) using colloidal syntheses. Extremely low coupling of charge carriers with phonons (2-6-fold lower than bulk and other low-dimensional semiconductors), high carrier mobilities (0.2-1.2 cm(2) V-1 s(-1), without dielectric screening), observation of infrared surface plasmons in ultrathin 2D semiconductor nanostructures, strong quantum-confinement, and other multiexcitonic properties (different phonon coupling and photon-to-charge collection efficiencies for band-edge and higher-energy excitons) can pave the way for efficient solution-processed devices made from these 2D nanostructured semiconductors.
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页码:4291 / 4297
页数:7
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